Technische Details STGAP2SICSNC STMicroelectronics
Description: DIGITAL ISO 4KV 1CH GATE DVR 8SO, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Current - Peak Output: 4A, Technology: Capacitive Coupling, Current - Output High, Low: 4A, -, Voltage - Isolation: 4000Vrms, Approval Agency: UL, VDE, Supplier Device Package: 8-SO, Rise / Fall Time (Typ): 30ns, 30ns, Common Mode Transient Immunity (Min): 100V/ns, Propagation Delay tpLH / tpHL (Max): 90ns, 90ns, Pulse Width Distortion (Max): 20ns, Part Status: Active, Number of Channels: 1, Voltage - Output Supply: 3.1V ~ 5.5V.
Weitere Produktangebote STGAP2SICSNC
Foto | Bezeichnung | Hersteller | Beschreibung |
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STGAP2SICSNC | Hersteller : STMicroelectronics |
Description: DIGITAL ISO 4KV 1CH GATE DVR 8SO Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Current - Peak Output: 4A Technology: Capacitive Coupling Current - Output High, Low: 4A, - Voltage - Isolation: 4000Vrms Approval Agency: UL, VDE Supplier Device Package: 8-SO Rise / Fall Time (Typ): 30ns, 30ns Common Mode Transient Immunity (Min): 100V/ns Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Pulse Width Distortion (Max): 20ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 3.1V ~ 5.5V |
Produkt ist nicht verfügbar |
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STGAP2SICSNC | Hersteller : STMicroelectronics | Galvanically Isolated Gate Drivers Galvanically isolated 4 A single gate driver for SiC MOSFETs |
Produkt ist nicht verfügbar |