STGB10M65DF2 STMICROELECTRONICS
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STGB10M65DF2 - IGBT, 20 A, 1.55 V, 115 W, 650 V, TO-263 (D2PAK), 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.55V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 115W
Bauform - Transistor: TO-263 (D2PAK)
Dauerkollektorstrom: 20A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (21-Jan-2025)
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Technische Details STGB10M65DF2 STMICROELECTRONICS
Description: IGBT TRENCH FS 650V 20A TO-263, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A, Reverse Recovery Time (trr): 96 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Power - Max: 115 W, Current - Collector Pulsed (Icm): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 20 A, Part Status: Active, Gate Charge: 28 nC, Test Condition: 400V, 10A, 22Ohm, 15V, Switching Energy: 120µJ (on), 270µJ (off), Td (on/off) @ 25°C: 19ns/91ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-263 (D2Pak).
Weitere Produktangebote STGB10M65DF2 nach Preis ab 2.92 EUR bis 5.37 EUR
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STGB10M65DF2 | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGB10M65DF2 - IGBT, 20 A, 1.55 V, 115 W, 650 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.55V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 115W Bauform - Transistor: TO-263 (D2PAK) Dauerkollektorstrom: 20A Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 206 Stücke: Lieferzeit 14-21 Tag (e) |
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STGB10M65DF2 | STMicroelectronics |
Description: IGBT TRENCH FS 650V 20A TO-263 Power - Max: 115 W Current - Collector Pulsed (Icm): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 20 A Part Status: Active Gate Charge: 28 nC Test Condition: 400V, 10A, 22Ohm, 15V Switching Energy: 120µJ (on), 270µJ (off) Td (on/off) @ 25°C: 19ns/91ns IGBT Type: Trench Field Stop Supplier Device Package: TO-263 (D2Pak) Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Reverse Recovery Time (trr): 96 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) |
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| STGB10M65DF2 |
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Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STGB10M65DF2 - IGBT, 20 A, 1.55 V, 115 W, 650 V, TO-263 (D2PAK), 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.55V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 115W
Bauform - Transistor: TO-263 (D2PAK)
Dauerkollektorstrom: 20A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (21-Jan-2025)
Description: STMICROELECTRONICS - STGB10M65DF2 - IGBT, 20 A, 1.55 V, 115 W, 650 V, TO-263 (D2PAK), 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.55V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 115W
Bauform - Transistor: TO-263 (D2PAK)
Dauerkollektorstrom: 20A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 5.09 EUR |
| 59+ | 3.95 EUR |
| 100+ | 2.92 EUR |
| STGB10M65DF2 |
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Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 20A TO-263
Power - Max: 115 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 20 A
Part Status: Active
Gate Charge: 28 nC
Test Condition: 400V, 10A, 22Ohm, 15V
Switching Energy: 120µJ (on), 270µJ (off)
Td (on/off) @ 25°C: 19ns/91ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Reverse Recovery Time (trr): 96 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: IGBT TRENCH FS 650V 20A TO-263
Power - Max: 115 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 20 A
Part Status: Active
Gate Charge: 28 nC
Test Condition: 400V, 10A, 22Ohm, 15V
Switching Energy: 120µJ (on), 270µJ (off)
Td (on/off) @ 25°C: 19ns/91ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Reverse Recovery Time (trr): 96 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.37 EUR |
| 10+ | 3.47 EUR |