STGB10M65DF2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT TRENCH FS 650V 20A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 96 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/91ns
Switching Energy: 120µJ (on), 270µJ (off)
Test Condition: 400V, 10A, 22Ohm, 15V
Gate Charge: 28 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 115 W
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.00 EUR |
| 10+ | 3.24 EUR |
| 100+ | 2.24 EUR |
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Technische Details STGB10M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 20A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 96 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 19ns/91ns, Switching Energy: 120µJ (on), 270µJ (off), Test Condition: 400V, 10A, 22Ohm, 15V, Gate Charge: 28 nC, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 115 W.
Weitere Produktangebote STGB10M65DF2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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STGB10M65DF2 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGB10M65DF2 - IGBT, 20 A, 1.55 V, 115 W, 650 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.55V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 115W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 20A SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 212 Stücke: Lieferzeit 14-21 Tag (e) |
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STGB10M65DF2 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGB10M65DF2 - IGBT, 20 A, 1.55 V, 115 W, 650 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.55V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 115W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 20A SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 233 Stücke: Lieferzeit 14-21 Tag (e) |
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STGB10M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 20A 115000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STGB10M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 20A 115mW 3-Pin(2+Tab) D2PAK T/R |
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| STGB10M65DF2 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 10A; 115W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 10A Power dissipation: 115W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB10M65DF2 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 20A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 96 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19ns/91ns Switching Energy: 120µJ (on), 270µJ (off) Test Condition: 400V, 10A, 22Ohm, 15V Gate Charge: 28 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 40 A Power - Max: 115 W |
Produkt ist nicht verfügbar |
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STGB10M65DF2 | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A low loss |
Produkt ist nicht verfügbar |
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| STGB10M65DF2 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 10A; 115W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 10A Power dissipation: 115W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |