STGB10M65DF2 STMicroelectronics
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 20A TO-263
Power - Max: 115 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 20 A
Part Status: Active
Gate Charge: 28 nC
Test Condition: 400V, 10A, 22Ohm, 15V
Switching Energy: 120µJ (on), 270µJ (off)
Td (on/off) @ 25°C: 19ns/91ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Reverse Recovery Time (trr): 96 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 4+ | 4.51 EUR |
| 10+ | 2.92 EUR |
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Technische Details STGB10M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 20A TO-263, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A, Reverse Recovery Time (trr): 96 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Power - Max: 115 W, Current - Collector Pulsed (Icm): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 20 A, Part Status: Active, Gate Charge: 28 nC, Test Condition: 400V, 10A, 22Ohm, 15V, Switching Energy: 120µJ (on), 270µJ (off), Td (on/off) @ 25°C: 19ns/91ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-263 (D2Pak).
Weitere Produktangebote STGB10M65DF2
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STGB10M65DF2 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 20A TO-263 Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Reverse Recovery Time (trr): 96 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Power - Max: 115 W Current - Collector Pulsed (Icm): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 20 A Part Status: Active Gate Charge: 28 nC Test Condition: 400V, 10A, 22Ohm, 15V Switching Energy: 120µJ (on), 270µJ (off) Td (on/off) @ 25°C: 19ns/91ns IGBT Type: Trench Field Stop Supplier Device Package: TO-263 (D2Pak) |
Produkt ist nicht verfügbar |
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STGB10M65DF2 | Hersteller : STMicroelectronics |
IGBTs Trench gate field-stop 650 V, 10 A low-loss M series IGBT in a D2PAK package |
Produkt ist nicht verfügbar |
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| STGB10M65DF2 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 10A; 115W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 10A Power dissipation: 115W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |