Technische Details STGB10NB40LZT4
Description: IGBT 440V 20A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A, Supplier Device Package: D2PAK, Td (on/off) @ 25°C: 1.3µs/8µs, Switching Energy: 2.4mJ (on), 5mJ (off), Test Condition: 328V, 10A, 1kOhm, 5V, Gate Charge: 28 nC, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 440 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 150 W, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote STGB10NB40LZT4
Foto | Bezeichnung | Hersteller | Beschreibung |
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STGB10NB40LZT4 | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STGB10NB40LZT4 | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STGB10NB40LZT4 | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STGB10NB40LZT4 | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STGB10NB40LZT4 | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STGB10NB40LZT4 | Hersteller : STMicroelectronics |
![]() Description: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry; ESD Type of transistor: IGBT Collector-emitter voltage: 410V Collector current: 10A Power dissipation: 150W Case: D2PAK Pulsed collector current: 40A Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Features of semiconductor devices: internally clamped Application: automotive industry Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB10NB40LZT4 | Hersteller : STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 1.3µs/8µs Switching Energy: 2.4mJ (on), 5mJ (off) Test Condition: 328V, 10A, 1kOhm, 5V Gate Charge: 28 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 440 V Current - Collector Pulsed (Icm): 40 A Power - Max: 150 W Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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STGB10NB40LZT4 | Hersteller : STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 1.3µs/8µs Switching Energy: 2.4mJ (on), 5mJ (off) Test Condition: 328V, 10A, 1kOhm, 5V Gate Charge: 28 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 440 V Current - Collector Pulsed (Icm): 40 A Power - Max: 150 W Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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![]() |
STGB10NB40LZT4 | Hersteller : STMicroelectronics |
![]() |
Produkt ist nicht verfügbar |
|
STGB10NB40LZT4 | Hersteller : STMicroelectronics |
![]() Description: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry; ESD Type of transistor: IGBT Collector-emitter voltage: 410V Collector current: 10A Power dissipation: 150W Case: D2PAK Pulsed collector current: 40A Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Features of semiconductor devices: internally clamped Application: automotive industry Version: ESD |
Produkt ist nicht verfügbar |