STGB14NC60KDT4 STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT 600V 25A 80W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22.5ns/116ns
Switching Energy: 82µJ (on), 155µJ (off)
Test Condition: 390V, 7A, 10Ohm, 15V
Gate Charge: 34.4 nC
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 80 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 1.58 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STGB14NC60KDT4 STMicroelectronics
Description: IGBT 600V 25A 80W D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 37 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A, Supplier Device Package: D2PAK, Td (on/off) @ 25°C: 22.5ns/116ns, Switching Energy: 82µJ (on), 155µJ (off), Test Condition: 390V, 7A, 10Ohm, 15V, Gate Charge: 34.4 nC, Part Status: Active, Current - Collector (Ic) (Max): 25 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 50 A, Power - Max: 80 W.
Weitere Produktangebote STGB14NC60KDT4 nach Preis ab 2.24 EUR bis 4.97 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
STGB14NC60KDT4 | Hersteller : STMicroelectronics |
Description: IGBT 600V 25A 80W D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 22.5ns/116ns Switching Energy: 82µJ (on), 155µJ (off) Test Condition: 390V, 7A, 10Ohm, 15V Gate Charge: 34.4 nC Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 50 A Power - Max: 80 W |
auf Bestellung 2684 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
STGB14NC60KDT4 | Hersteller : STMicroelectronics |
IGBT Transistors PowerMESH" IGBT |
auf Bestellung 1000 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
 |
STGB14NC60KDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
STGB14NC60KDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 25A 80W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
STGB14NC60KDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 25A 80W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| STGB14NC60KDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
 |
STGB14NC60KDT4 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 14A Power dissipation: 80W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: SMD Gate charge: 34.4nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
STGB14NC60KDT4 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 14A Power dissipation: 80W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: SMD Gate charge: 34.4nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |