STGB15M65DF2 STMicroelectronics
Hersteller: STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A low loss
auf Bestellung 716 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 4.55 EUR |
| 14+ | 3.8 EUR |
| 100+ | 3.02 EUR |
| 500+ | 2.56 EUR |
| 1000+ | 2.11 EUR |
| 2000+ | 2.01 EUR |
| 5000+ | 1.94 EUR |
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Technische Details STGB15M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 30A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 142 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 24ns/93ns, Switching Energy: 90µJ (on), 450µJ (off), Test Condition: 400V, 15A, 12Ohm, 15V, Gate Charge: 45 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 136 W.
Weitere Produktangebote STGB15M65DF2
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STGB15M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 30A 136W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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STGB15M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 30A 136W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STGB15M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 30A 136W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STGB15M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 30A 136W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STGB15M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 30A 136000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STGB15M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 30A 136W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STGB15M65DF2 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 15A; 136W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 136W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB15M65DF2 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 30A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 142 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24ns/93ns Switching Energy: 90µJ (on), 450µJ (off) Test Condition: 400V, 15A, 12Ohm, 15V Gate Charge: 45 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 136 W |
Produkt ist nicht verfügbar |
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STGB15M65DF2 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 30A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 142 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24ns/93ns Switching Energy: 90µJ (on), 450µJ (off) Test Condition: 400V, 15A, 12Ohm, 15V Gate Charge: 45 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 136 W |
Produkt ist nicht verfügbar |
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| STGB15M65DF2 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 15A; 136W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 136W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |