STGB15M65DF2 STMicroelectronics
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 1.08 EUR |
| 2000+ | 0.98 EUR |
| 3000+ | 0.93 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STGB15M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 30A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 142 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 24ns/93ns, Switching Energy: 90µJ (on), 450µJ (off), Test Condition: 400V, 15A, 12Ohm, 15V, Gate Charge: 45 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 136 W.
Weitere Produktangebote STGB15M65DF2 nach Preis ab 0.93 EUR bis 3.71 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
STGB15M65DF2 | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 650V 30A 136W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
STGB15M65DF2 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 30A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 142 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24ns/93ns Switching Energy: 90µJ (on), 450µJ (off) Test Condition: 400V, 15A, 12Ohm, 15V Gate Charge: 45 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 136 W |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
STGB15M65DF2 | Hersteller : STMicroelectronics |
IGBTs Trench gate field-stop 650 V, 15 A low-loss M series IGBT in a D2PAK package |
auf Bestellung 1477 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
STGB15M65DF2 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 30A TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 142 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24ns/93ns Switching Energy: 90µJ (on), 450µJ (off) Test Condition: 400V, 15A, 12Ohm, 15V Gate Charge: 45 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 136 W |
auf Bestellung 2516 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
STGB15M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 30A 136W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
|
|
STGB15M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 30A 136W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
STGB15M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 30A 136W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
STGB15M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 30A 136000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
| STGB15M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 30A 136W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
||||||||||||||||
| STGB15M65DF2 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 15A; 136W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 136W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |