STGB19NC60HDT4 STMicroelectronics
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 1.99 EUR |
| 2000+ | 1.82 EUR |
| 5000+ | 1.67 EUR |
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Technische Details STGB19NC60HDT4 STMicroelectronics
Description: IGBT 600V 40A 130W D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 31 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A, Supplier Device Package: D2PAK, Td (on/off) @ 25°C: 25ns/97ns, Switching Energy: 85µJ (on), 189µJ (off), Test Condition: 390V, 12A, 10Ohm, 15V, Gate Charge: 53 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 130 W.
Weitere Produktangebote STGB19NC60HDT4 nach Preis ab 1.67 EUR bis 6.53 EUR
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STGB19NC60HDT4 | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 600V 40A 130W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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STGB19NC60HDT4 | Hersteller : STMicroelectronics |
Description: IGBT 600V 40A 130W D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 25ns/97ns Switching Energy: 85µJ (on), 189µJ (off) Test Condition: 390V, 12A, 10Ohm, 15V Gate Charge: 53 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 130 W |
auf Bestellung 998 Stücke: Lieferzeit 10-14 Tag (e) |
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STGB19NC60HDT4 | Hersteller : STMicroelectronics |
IGBT Transistors N Ch 600V 19A |
auf Bestellung 2773 Stücke: Lieferzeit 14-28 Tag (e) |
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STGB19NC60HDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 40A 130000mW 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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| STGB19NC60HDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 40A 130000mW 3-Pin(2+Tab) D2PAK T/R |
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STGB19NC60HDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 40A 130W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STGB19NC60HDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 40A 130W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STGB19NC60HDT4 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 19A; 130W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 19A Power dissipation: 130W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB19NC60HDT4 | Hersteller : STMicroelectronics |
Description: IGBT 600V 40A 130W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 25ns/97ns Switching Energy: 85µJ (on), 189µJ (off) Test Condition: 390V, 12A, 10Ohm, 15V Gate Charge: 53 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 130 W |
Produkt ist nicht verfügbar |
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| STGB19NC60HDT4 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 19A; 130W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 19A Power dissipation: 130W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |