
STGB19NC60HDT4 STMicroelectronics
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
1000+ | 1.67 EUR |
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Technische Details STGB19NC60HDT4 STMicroelectronics
Description: IGBT 600V 40A 130W D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 31 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A, Supplier Device Package: D2PAK, Td (on/off) @ 25°C: 25ns/97ns, Switching Energy: 85µJ (on), 189µJ (off), Test Condition: 390V, 12A, 10Ohm, 15V, Gate Charge: 53 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 130 W.
Weitere Produktangebote STGB19NC60HDT4 nach Preis ab 1.50 EUR bis 5.86 EUR
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STGB19NC60HDT4 | Hersteller : STMicroelectronics |
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auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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STGB19NC60HDT4 | Hersteller : STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 25ns/97ns Switching Energy: 85µJ (on), 189µJ (off) Test Condition: 390V, 12A, 10Ohm, 15V Gate Charge: 53 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 130 W |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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STGB19NC60HDT4 | Hersteller : STMicroelectronics |
![]() Description: Transistor: IGBT; 600V; 19A; 130W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 19A Power dissipation: 130W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 984 Stücke: Lieferzeit 7-14 Tag (e) |
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STGB19NC60HDT4 | Hersteller : STMicroelectronics |
![]() Description: Transistor: IGBT; 600V; 19A; 130W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 19A Power dissipation: 130W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 984 Stücke: Lieferzeit 14-21 Tag (e) |
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STGB19NC60HDT4 | Hersteller : STMicroelectronics |
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auf Bestellung 3546 Stücke: Lieferzeit 10-14 Tag (e) |
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STGB19NC60HDT4 | Hersteller : STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 25ns/97ns Switching Energy: 85µJ (on), 189µJ (off) Test Condition: 390V, 12A, 10Ohm, 15V Gate Charge: 53 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 130 W |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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STGB19NC60HDT4 | Hersteller : STMicroelectronics |
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auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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STGB19NC60HDT4 |
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auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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STGB19NC60HDT4 | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STGB19NC60HDT4 | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STGB19NC60HDT4 | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |