STGB20H60DF STMicroelectronics
auf Bestellung 207 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 5.25 EUR |
| 12+ | 4.34 EUR |
| 100+ | 3.48 EUR |
| 250+ | 3.28 EUR |
| 500+ | 2.89 EUR |
| 1000+ | 2.42 EUR |
| 2000+ | 2.31 EUR |
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Technische Details STGB20H60DF STMicroelectronics
Description: IGBT 600V 40A 167W D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 90 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A, Supplier Device Package: D2PAK, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 42.5ns/177ns, Switching Energy: 209µJ (on), 261µJ (off), Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 115 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 167 W.
Weitere Produktangebote STGB20H60DF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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STGB20H60DF | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 600V 40A 100000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STGB20H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 40A 100000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STGB20H60DF | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 167W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 115nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB20H60DF | Hersteller : STMicroelectronics |
Description: IGBT 600V 40A 167W D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Supplier Device Package: D2PAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 42.5ns/177ns Switching Energy: 209µJ (on), 261µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 115 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 167 W |
Produkt ist nicht verfügbar |
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STGB20H60DF | Hersteller : STMicroelectronics |
Description: IGBT 600V 40A 167W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Supplier Device Package: D2PAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 42.5ns/177ns Switching Energy: 209µJ (on), 261µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 115 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 167 W |
Produkt ist nicht verfügbar |
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| STGB20H60DF | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 167W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 115nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |