Produkte > STMICROELECTRONICS > STGB20H65FB2

STGB20H65FB2 STMicroelectronics


stgb20h65fb2.pdf Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details STGB20H65FB2 STMicroelectronics

Description: IGBT 600V 40A 167W D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 16ns/78.8ns, Switching Energy: 265µJ (on), 214µJ (off), Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 56 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 147 W.

Weitere Produktangebote STGB20H65FB2

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
STGB20H65FB2 Hersteller : STMicroelectronics stgb20h65fb2.pdf Description: IGBT 600V 40A 167W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/78.8ns
Switching Energy: 265µJ (on), 214µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 147 W
Produkt ist nicht verfügbar
STGB20H65FB2 Hersteller : STMicroelectronics stgb20h65fb2-1874827.pdf IGBT Transistors Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT
Produkt ist nicht verfügbar
STGB20H65FB2 Hersteller : STMicroelectronics stgb20h65fb2.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Produkt ist nicht verfügbar