STGB20N40LZ STMicroelectronics
auf Bestellung 952 Stücke:
Lieferzeit 94-98 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.12 EUR |
| 1000+ | 2.01 EUR |
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Technische Details STGB20N40LZ STMicroelectronics
Description: IGBT 390V 25A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Logic, Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A, Supplier Device Package: TO-263 (D2Pak), Td (on/off) @ 25°C: 700ns/4.3µs, Test Condition: 300V, 10A, 1kOhm, 5V, Gate Charge: 24 nC, Current - Collector (Ic) (Max): 25 A, Voltage - Collector Emitter Breakdown (Max): 390 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 150 W, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote STGB20N40LZ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STGB20N40LZ | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 390V 25A 150000mW Automotive 3-Pin(2+Tab) D2PAK T/R |
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| STGB20N40LZ | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 390V 25A 150W Automotive 3-Pin(2+Tab) D2PAK T/R |
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| STGB20N40LZ | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 390V; 20A; 150W; D2PAK; ESD Case: D2PAK Mounting: SMD Collector-emitter voltage: 390V Collector current: 20A Pulsed collector current: 40A Type of transistor: IGBT Power dissipation: 150W Kind of package: reel; tape Version: ESD Features of semiconductor devices: internally clamped; logic level Gate charge: 24nC Anzahl je Verpackung: 1 Stücke |
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STGB20N40LZ | Hersteller : STMicroelectronics |
Description: IGBT 390V 25A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 700ns/4.3µs Test Condition: 300V, 10A, 1kOhm, 5V Gate Charge: 24 nC Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 390 V Current - Collector Pulsed (Icm): 40 A Power - Max: 150 W Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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STGB20N40LZ | Hersteller : STMicroelectronics |
Description: IGBT 390V 25A TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 700ns/4.3µs Test Condition: 300V, 10A, 1kOhm, 5V Gate Charge: 24 nC Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 390 V Current - Collector Pulsed (Icm): 40 A Power - Max: 150 W Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| STGB20N40LZ | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 390V; 20A; 150W; D2PAK; ESD Case: D2PAK Mounting: SMD Collector-emitter voltage: 390V Collector current: 20A Pulsed collector current: 40A Type of transistor: IGBT Power dissipation: 150W Kind of package: reel; tape Version: ESD Features of semiconductor devices: internally clamped; logic level Gate charge: 24nC |
Produkt ist nicht verfügbar |