STGB20V60DF STMicroelectronics
Hersteller: STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
auf Bestellung 460 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 6.19 EUR |
| 10+ | 5.59 EUR |
| 25+ | 5.25 EUR |
| 100+ | 4.5 EUR |
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Technische Details STGB20V60DF STMicroelectronics
Description: IGBT 600V 40A 167W D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 40 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A, Supplier Device Package: D2PAK, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 38ns/149ns, Switching Energy: 200µJ (on), 130µJ (off), Test Condition: 400V, 20A, 15V, Gate Charge: 116 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 167 W.
Weitere Produktangebote STGB20V60DF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STGB20V60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) D2PAK T/R |
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| STGB20V60DF | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 167W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 116nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
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STGB20V60DF | Hersteller : STMicroelectronics |
Description: IGBT 600V 40A 167W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: D2PAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 38ns/149ns Switching Energy: 200µJ (on), 130µJ (off) Test Condition: 400V, 20A, 15V Gate Charge: 116 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 167 W |
Produkt ist nicht verfügbar |
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STGB20V60DF | Hersteller : STMicroelectronics |
Description: IGBT 600V 40A 167W D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: D2PAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 38ns/149ns Switching Energy: 200µJ (on), 130µJ (off) Test Condition: 400V, 20A, 15V Gate Charge: 116 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 167 W |
Produkt ist nicht verfügbar |
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| STGB20V60DF | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 167W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 116nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |