STGB20V60DF STMicroelectronics
Hersteller: STMicroelectronics
IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.99 EUR |
| 10+ | 4.5 EUR |
| 25+ | 4.24 EUR |
| 100+ | 3.62 EUR |
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Technische Details STGB20V60DF STMicroelectronics
Description: IGBT 600V 40A 167W D2PAK, Packaging: Tape & Reel (TR), Power - Max: 167 W, Current - Collector Pulsed (Icm): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 40 A, Part Status: Obsolete, Gate Charge: 116 nC, Test Condition: 400V, 20A, 15V, Switching Energy: 200µJ (on), 130µJ (off), Td (on/off) @ 25°C: 38ns/149ns, IGBT Type: Trench Field Stop, Supplier Device Package: D2PAK, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A, Reverse Recovery Time (trr): 40 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB.
Weitere Produktangebote STGB20V60DF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
STGB20V60DF | STMicroelectronics |
Description: IGBT 600V 40A 167W D2PAK Packaging: Tape & Reel (TR) Power - Max: 167 W Current - Collector Pulsed (Icm): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 40 A Part Status: Obsolete Gate Charge: 116 nC Test Condition: 400V, 20A, 15V Switching Energy: 200µJ (on), 130µJ (off) Td (on/off) @ 25°C: 38ns/149ns IGBT Type: Trench Field Stop Supplier Device Package: D2PAK Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Reverse Recovery Time (trr): 40 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
STGB20V60DF | STMicroelectronics |
Description: IGBT 600V 40A 167W D2PAK Power - Max: 167 W Current - Collector Pulsed (Icm): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 40 A Part Status: Obsolete Gate Charge: 116 nC Test Condition: 400V, 20A, 15V Switching Energy: 200µJ (on), 130µJ (off) Td (on/off) @ 25°C: 38ns/149ns IGBT Type: Trench Field Stop Supplier Device Package: D2PAK Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Reverse Recovery Time (trr): 40 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STGB20V60DF |
|
Hersteller: STMicroelectronics
Description: IGBT 600V 40A 167W D2PAK
Packaging: Tape & Reel (TR)
Power - Max: 167 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
Gate Charge: 116 nC
Test Condition: 400V, 20A, 15V
Switching Energy: 200µJ (on), 130µJ (off)
Td (on/off) @ 25°C: 38ns/149ns
IGBT Type: Trench Field Stop
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Reverse Recovery Time (trr): 40 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Description: IGBT 600V 40A 167W D2PAK
Packaging: Tape & Reel (TR)
Power - Max: 167 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
Gate Charge: 116 nC
Test Condition: 400V, 20A, 15V
Switching Energy: 200µJ (on), 130µJ (off)
Td (on/off) @ 25°C: 38ns/149ns
IGBT Type: Trench Field Stop
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Reverse Recovery Time (trr): 40 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STGB20V60DF |
|
Hersteller: STMicroelectronics
Description: IGBT 600V 40A 167W D2PAK
Power - Max: 167 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
Gate Charge: 116 nC
Test Condition: 400V, 20A, 15V
Switching Energy: 200µJ (on), 130µJ (off)
Td (on/off) @ 25°C: 38ns/149ns
IGBT Type: Trench Field Stop
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Reverse Recovery Time (trr): 40 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: IGBT 600V 40A 167W D2PAK
Power - Max: 167 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
Gate Charge: 116 nC
Test Condition: 400V, 20A, 15V
Switching Energy: 200µJ (on), 130µJ (off)
Td (on/off) @ 25°C: 38ns/149ns
IGBT Type: Trench Field Stop
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Reverse Recovery Time (trr): 40 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH