STGB25N36LZAG STMicroelectronics
Hersteller: STMicroelectronicsTrans IGBT Chip N-CH 325V 25A 150W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
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Technische Details STGB25N36LZAG STMicroelectronics
Description: DISCRETE, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Logic, Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A, Supplier Device Package: TO-263 (D2Pak), Td (on/off) @ 25°C: 1.1µs/7.4µs, Gate Charge: 25.7 nC, Grade: Automotive, Current - Collector (Ic) (Max): 25 A, Voltage - Collector Emitter Breakdown (Max): 350 V, Current - Collector Pulsed (Icm): 50 A, Power - Max: 150 W, Qualification: AEC-Q101.
Weitere Produktangebote STGB25N36LZAG
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STGB25N36LZAG | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 325V 25A 150000mW Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STGB25N36LZAG | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 325V 25A 150mW Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STGB25N36LZAG | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 350V; 25A; 150W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 350V Collector current: 25A Power dissipation: 150W Case: D2PAK Pulsed collector current: 50A Mounting: SMD Gate charge: 25.7nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: automotive industry; ignition systems Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGB25N36LZAG | Hersteller : STMicroelectronics |
Description: DISCRETE Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 1.1µs/7.4µs Gate Charge: 25.7 nC Grade: Automotive Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector Pulsed (Icm): 50 A Power - Max: 150 W Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| STGB25N36LZAG | Hersteller : STMicroelectronics |
IGBT Transistors Automotive-grade 360 V internally clamped IGBT ESCIS 300 mJ |
Produkt ist nicht verfügbar |
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| STGB25N36LZAG | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 350V; 25A; 150W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 350V Collector current: 25A Power dissipation: 150W Case: D2PAK Pulsed collector current: 50A Mounting: SMD Gate charge: 25.7nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: automotive industry; ignition systems |
Produkt ist nicht verfügbar |