STGB30H60DFB STMicroelectronics
Hersteller: STMicroelectronicsIGBT Transistors Trench gate field-stop 600 V, 30 A high speed HB series IGBT
auf Bestellung 975 Stücke:
Lieferzeit 140-154 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 7.28 EUR |
| 10+ | 6.11 EUR |
| 25+ | 5.75 EUR |
| 100+ | 4.94 EUR |
| 250+ | 4.65 EUR |
| 500+ | 4.39 EUR |
| 1000+ | 3.74 EUR |
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Technische Details STGB30H60DFB STMicroelectronics
Description: TRENCH GATE FIELD-STOP IGBT, HB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 53 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: D²PAK (TO-263), IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 37ns/146ns, Switching Energy: 383µJ (on), 293µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 149 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 260 W.
Weitere Produktangebote STGB30H60DFB
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STGB30H60DFB | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGB30H60DFB - IGBT, 60 A, 1.55 V, 260 W, 600 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85423990 rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.55V usEccn: EAR99 euEccn: NLR Verlustleistung: 260W Anzahl der Pins: 3Pin(s) Kollektor-Emitter-Spannung, max.: 600V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 60A |
auf Bestellung 880 Stücke: Lieferzeit 14-21 Tag (e) |
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STGB30H60DFB | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGB30H60DFB - IGBT, 60 A, 1.55 V, 260 W, 600 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85423990 rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.55V usEccn: EAR99 euEccn: NLR Verlustleistung: 260W Anzahl der Pins: 3Pin(s) Kollektor-Emitter-Spannung, max.: 600V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 60A |
auf Bestellung 880 Stücke: Lieferzeit 14-21 Tag (e) |
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STGB30H60DFB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STGB30H60DFB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STGB30H60DFB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(2+Tab) D2PAK T/R |
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| STGB30H60DFB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(2+Tab) D2PAK T/R |
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| STGB30H60DFB | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 260W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 149nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB30H60DFB | Hersteller : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP IGBT, HB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 53 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: D²PAK (TO-263) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/146ns Switching Energy: 383µJ (on), 293µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 149 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
Produkt ist nicht verfügbar |
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STGB30H60DFB | Hersteller : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP IGBT, HB Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 53 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: D²PAK (TO-263) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/146ns Switching Energy: 383µJ (on), 293µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 149 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
Produkt ist nicht verfügbar |
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| STGB30H60DFB | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 260W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 149nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |