STGB30H60DLLFBAG STMicroelectronics
Hersteller: STMicroelectronicsIGBT Transistors Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed
auf Bestellung 738 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 6.68 EUR |
| 10+ | 5.62 EUR |
| 25+ | 5.3 EUR |
| 100+ | 4.52 EUR |
| 250+ | 4.29 EUR |
| 500+ | 4.03 EUR |
| 1000+ | 3.43 EUR |
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Technische Details STGB30H60DLLFBAG STMicroelectronics
Description: IGBT, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Logic, Vce(on) (Max) @ Vge, Ic: 2.15V @ 5V, 30A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/320ns, Switching Energy: 600µJ (off), Test Condition: 400V, 30A, 10Ohm, 5V, Gate Charge: 110 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 260 W.
Weitere Produktangebote STGB30H60DLLFBAG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STGB30H60DLLFBAG | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 260000mW Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STGB30H60DLLFBAG | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 260mW Automotive 3-Pin(2+Tab) D2PAK T/R |
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| STGB30H60DLLFBAG | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 260W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Application: ignition systems Anzahl je Verpackung: 1 Stücke |
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STGB30H60DLLFBAG | Hersteller : STMicroelectronics |
Description: IGBT Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 2.15V @ 5V, 30A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/320ns Switching Energy: 600µJ (off) Test Condition: 400V, 30A, 10Ohm, 5V Gate Charge: 110 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
Produkt ist nicht verfügbar |
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STGB30H60DLLFBAG | Hersteller : STMicroelectronics |
Description: IGBT Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 2.15V @ 5V, 30A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/320ns Switching Energy: 600µJ (off) Test Condition: 400V, 30A, 10Ohm, 5V Gate Charge: 110 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
Produkt ist nicht verfügbar |
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| STGB30H60DLLFBAG | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 260W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Application: ignition systems |
Produkt ist nicht verfügbar |