STGB30H60DLLFBAG STMicroelectronics
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 2.15V @ 5V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/320ns
Switching Energy: 600µJ (off)
Test Condition: 400V, 30A, 10Ohm, 5V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
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Technische Details STGB30H60DLLFBAG STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Logic, Vce(on) (Max) @ Vge, Ic: 2.15V @ 5V, 30A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/320ns, Switching Energy: 600µJ (off), Test Condition: 400V, 30A, 10Ohm, 5V, Gate Charge: 110 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 260 W.
Weitere Produktangebote STGB30H60DLLFBAG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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STGB30H60DLLFBAG | STMicroelectronics |
Description: IGBT TRENCH FS 600V 60A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 2.15V @ 5V, 30A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/320ns Switching Energy: 600µJ (off) Test Condition: 400V, 30A, 10Ohm, 5V Gate Charge: 110 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
STGB30H60DLLFBAG | STMicroelectronics |
IGBTs Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
STGB30H60DLLFBAG | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK; ignition systems Mounting: SMD Case: D2PAK Kind of package: reel; tape Collector current: 30A Collector-emitter voltage: 600V Power dissipation: 260W Gate charge: 110nC Pulsed collector current: 120A Application: ignition systems Type of transistor: IGBT Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
STGB30H60DLLFBAG | STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| STGB30H60DLLFBAG |
|
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 2.15V @ 5V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/320ns
Switching Energy: 600µJ (off)
Test Condition: 400V, 30A, 10Ohm, 5V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Description: IGBT TRENCH FS 600V 60A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 2.15V @ 5V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/320ns
Switching Energy: 600µJ (off)
Test Condition: 400V, 30A, 10Ohm, 5V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STGB30H60DLLFBAG |
|
Hersteller: STMicroelectronics
IGBTs Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed
IGBTs Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STGB30H60DLLFBAG |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK; ignition systems
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Collector current: 30A
Collector-emitter voltage: 600V
Power dissipation: 260W
Gate charge: 110nC
Pulsed collector current: 120A
Application: ignition systems
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK; ignition systems
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Collector current: 30A
Collector-emitter voltage: 600V
Power dissipation: 260W
Gate charge: 110nC
Pulsed collector current: 120A
Application: ignition systems
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STGB30H60DLLFBAG |
|
Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH