STGB30H65DFB2 STMicroelectronics
Hersteller: STMicroelectronicsIGBT Transistors Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT
auf Bestellung 1 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 5.41 EUR |
| 12+ | 4.52 EUR |
| 100+ | 3.64 EUR |
| 250+ | 3.48 EUR |
| 500+ | 3.02 EUR |
| 1000+ | 2.49 EUR |
| 2000+ | 2.37 EUR |
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Technische Details STGB30H65DFB2 STMicroelectronics
Description: TRENCH GATE FIELD-STOP 650 V, 30, Packaging: Tape & Reel (TR), Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 115 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: D2PAK-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18.4ns/71ns, Switching Energy: 270µJ (on), 310µJ (off), Test Condition: 400V, 30A, 6.8Ohm, 15V, Gate Charge: 90 nC, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 167 W.
Weitere Produktangebote STGB30H65DFB2
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STGB30H65DFB2 | Hersteller : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP 650 V, 30 Packaging: Cut Tape (CT) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 115 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: D2PAK-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18.4ns/71ns Switching Energy: 270µJ (on), 310µJ (off) Test Condition: 400V, 30A, 6.8Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 167 W |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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STGB30H65DFB2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 50A 167W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STGB30H65DFB2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 50A 167W 3-Pin(2+Tab) D2PAK T/R |
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| STGB30H65DFB2 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 30A; 167W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 167W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB30H65DFB2 | Hersteller : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP 650 V, 30 Packaging: Tape & Reel (TR) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 115 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: D2PAK-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18.4ns/71ns Switching Energy: 270µJ (on), 310µJ (off) Test Condition: 400V, 30A, 6.8Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 167 W |
Produkt ist nicht verfügbar |
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| STGB30H65DFB2 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 30A; 167W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 167W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: SMD Gate charge: 90nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |