STGB30M65DF2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT TRENCH FS 650V 60A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31.6ns/115ns
Switching Energy: 300µJ (on), 960µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 1.66 EUR |
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Technische Details STGB30M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 60A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 31.6ns/115ns, Switching Energy: 300µJ (on), 960µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 80 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 258 W.
Weitere Produktangebote STGB30M65DF2 nach Preis ab 1.59 EUR bis 4.89 EUR
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STGB30M65DF2 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 60A TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31.6ns/115ns Switching Energy: 300µJ (on), 960µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 80 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 258 W |
auf Bestellung 1818 Stücke: Lieferzeit 10-14 Tag (e) |
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STGB30M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STGB30M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 258W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STGB30M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 258W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STGB30M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 258W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STGB30M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 258W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |