STGB30M65DF2 STMicroelectronics
auf Bestellung 17000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 2.26 EUR |
| 2000+ | 2.04 EUR |
| 5000+ | 1.9 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STGB30M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 60A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 31.6ns/115ns, Switching Energy: 300µJ (on), 960µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 80 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 258 W.
Weitere Produktangebote STGB30M65DF2 nach Preis ab 1.9 EUR bis 6.79 EUR
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STGB30M65DF2 | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 650V 60A 258W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 17000 Stücke: Lieferzeit 14-21 Tag (e) |
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STGB30M65DF2 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 60A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31.6ns/115ns Switching Energy: 300µJ (on), 960µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 80 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 258 W |
auf Bestellung 250 Stücke: Lieferzeit 21-28 Tag (e) |
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STGB30M65DF2 | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss |
auf Bestellung 18 Stücke: Lieferzeit 14-28 Tag (e) |
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STGB30M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STGB30M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 258W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STGB30M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 258W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STGB30M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 258W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STGB30M65DF2 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 30A; 258W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 258W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB30M65DF2 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 60A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31.6ns/115ns Switching Energy: 300µJ (on), 960µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 80 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 258 W |
Produkt ist nicht verfügbar |
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| STGB30M65DF2 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 30A; 258W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 258W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |