STGB30V60DF STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT TRENCH FS 600V 60A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 3.74 EUR |
| 2000+ | 3.52 EUR |
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Technische Details STGB30V60DF STMicroelectronics
Description: IGBT TRENCH FS 600V 60A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 53 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A, Supplier Device Package: D2PAK, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 45ns/189ns, Switching Energy: 383µJ (on), 233µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 163 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 258 W.
Weitere Produktangebote STGB30V60DF nach Preis ab 3.77 EUR bis 7.31 EUR
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STGB30V60DF | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 600V 60A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 53 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Supplier Device Package: D2PAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 45ns/189ns Switching Energy: 383µJ (on), 233µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 163 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 258 W |
auf Bestellung 2986 Stücke: Lieferzeit 21-28 Tag (e) |
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STGB30V60DF | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A very high speed |
auf Bestellung 1000 Stücke: Lieferzeit 140-154 Tag (e) |
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STGB30V60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STGB30V60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 258mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STGB30V60DF | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 30A; 258W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 258W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 163nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STGB30V60DF | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 30A; 258W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 258W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 163nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |