Technische Details STGB30V60DF STMicroelectronics
Description: IGBT TRENCH FS 600V 60A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 53 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A, Supplier Device Package: D2PAK, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 45ns/189ns, Switching Energy: 383µJ (on), 233µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 163 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 258 W.
Weitere Produktangebote STGB30V60DF nach Preis ab 2.25 EUR bis 8.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
STGB30V60DF | STMicroelectronics |
 Trans IGBT Chip N-CH 600V 60A 258W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||
 |
STGB30V60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 60A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 53 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Supplier Device Package: D2PAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 45ns/189ns Switching Energy: 383µJ (on), 233µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 163 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 258 W |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||
 |
STGB30V60DF | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGB30V60DF - IGBT, 60 A, 1.85 V, 258 W, 600 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 1.85V Verlustleistung: 258W SVHC: No SVHC (05-Nov-2025) Bauform - Transistor: TO-263 (D2PAK) Dauerkollektorstrom: 60A Anzahl der Pins: 3Pin(s) Produktpalette: V Series Kollektor-Emitter-Spannung, max.: 600V productTraceability: No usEccn: EAR99 Betriebstemperatur, max.: 175°C |
auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) |
|
| STGB30V60DF |
|
Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 600V 60A 258W 3-Pin(2+Tab) D2PAK T/R
Trans IGBT Chip N-CH 600V 60A 258W 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 2.25 EUR |
| STGB30V60DF |
|
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
Description: IGBT TRENCH FS 600V 60A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.62 EUR |
| STGB30V60DF |
|
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STGB30V60DF - IGBT, 60 A, 1.85 V, 258 W, 600 V, TO-263 (D2PAK), 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.85V
Verlustleistung: 258W
SVHC: No SVHC (05-Nov-2025)
Bauform - Transistor: TO-263 (D2PAK)
Dauerkollektorstrom: 60A
Anzahl der Pins: 3Pin(s)
Produktpalette: V Series
Kollektor-Emitter-Spannung, max.: 600V
productTraceability: No
usEccn: EAR99
Betriebstemperatur, max.: 175°C
Description: STMICROELECTRONICS - STGB30V60DF - IGBT, 60 A, 1.85 V, 258 W, 600 V, TO-263 (D2PAK), 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.85V
Verlustleistung: 258W
SVHC: No SVHC (05-Nov-2025)
Bauform - Transistor: TO-263 (D2PAK)
Dauerkollektorstrom: 60A
Anzahl der Pins: 3Pin(s)
Produktpalette: V Series
Kollektor-Emitter-Spannung, max.: 600V
productTraceability: No
usEccn: EAR99
Betriebstemperatur, max.: 175°C
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 8.4 EUR |
| 44+ | 5.33 EUR |