STGB3NC120HDT4 STMicroelectronics
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.96 EUR |
| 2000+ | 0.87 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STGB3NC120HDT4 STMicroelectronics
Description: IGBT 1200V 14A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 51 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A, Supplier Device Package: TO-263 (D2Pak), Td (on/off) @ 25°C: 15ns/118ns, Switching Energy: 236µJ (on), 290µJ (off), Test Condition: 800V, 3A, 10Ohm, 15V, Gate Charge: 24 nC, Part Status: Active, Current - Collector (Ic) (Max): 14 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 20 A, Power - Max: 75 W.
Weitere Produktangebote STGB3NC120HDT4 nach Preis ab 0.87 EUR bis 3.5 EUR
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STGB3NC120HDT4 | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 1200V 14A 75W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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STGB3NC120HDT4 | Hersteller : STMicroelectronics |
Description: IGBT 1200V 14A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 51 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 15ns/118ns Switching Energy: 236µJ (on), 290µJ (off) Test Condition: 800V, 3A, 10Ohm, 15V Gate Charge: 24 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 20 A Power - Max: 75 W |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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STGB3NC120HDT4 | Hersteller : STMicroelectronics |
Description: IGBT 1200V 14A TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 51 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 15ns/118ns Switching Energy: 236µJ (on), 290µJ (off) Test Condition: 800V, 3A, 10Ohm, 15V Gate Charge: 24 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 20 A Power - Max: 75 W |
auf Bestellung 2668 Stücke: Lieferzeit 10-14 Tag (e) |
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STGB3NC120HDT4 | Hersteller : STMicroelectronics |
IGBTs IGBT 1200V 7A PowerMESH Ultrafast |
auf Bestellung 1135 Stücke: Lieferzeit 10-14 Tag (e) |
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STGB3NC120HDT4 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGB3NC120HDT4 - IGBT, 14 A, 2.3 V, 75 W, 1.2 kV, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.3V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 75W Bauform - Transistor: TO-263 (D2PAK) Dauerkollektorstrom: 14A Anzahl der Pins: 3Pin(s) Produktpalette: PowerMESH Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 687 Stücke: Lieferzeit 14-21 Tag (e) |
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STGB3NC120HDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 14A 75000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STGB3NC120HDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 14A 75000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STGB3NC120HDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 14A 75W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STGB3NC120HDT4 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 7A; 75W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 7A Power dissipation: 75W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STGB3NC120HDT4 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 7A; 75W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 7A Power dissipation: 75W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |