STGB4M65DF2 STMicroelectronics
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Technische Details STGB4M65DF2 STMicroelectronics
Description: TRENCH GATE FIELD-STOP IGBT, M S, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 133 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A, Supplier Device Package: D2PAK, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 12ns/86ns, Switching Energy: 40µJ (on), 136µJ (off), Test Condition: 400V, 4A, 47Ohm, 15V, Gate Charge: 15.2 nC, Part Status: Active, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 16 A, Power - Max: 68 W.
Weitere Produktangebote STGB4M65DF2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STGB4M65DF2 | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 650V 8A 68mW 3-Pin(2+Tab) D2PAK T/R |
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| STGB4M65DF2 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 4A; 86W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 4A Power dissipation: 86W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 16A Mounting: SMD Gate charge: 15.2nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB4M65DF2 | Hersteller : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP IGBT, M S Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 133 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: D2PAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/86ns Switching Energy: 40µJ (on), 136µJ (off) Test Condition: 400V, 4A, 47Ohm, 15V Gate Charge: 15.2 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 16 A Power - Max: 68 W |
Produkt ist nicht verfügbar |
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STGB4M65DF2 | Hersteller : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP IGBT, M S Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 133 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: D2PAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/86ns Switching Energy: 40µJ (on), 136µJ (off) Test Condition: 400V, 4A, 47Ohm, 15V Gate Charge: 15.2 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 16 A Power - Max: 68 W |
Produkt ist nicht verfügbar |
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STGB4M65DF2 | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss |
Produkt ist nicht verfügbar |
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| STGB4M65DF2 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 4A; 86W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 4A Power dissipation: 86W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 16A Mounting: SMD Gate charge: 15.2nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |