STGB50H65FB2 STMicroelectronics
Hersteller: STMicroelectronics
IGBTs Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK packa
| Anzahl | Preis |
|---|---|
| 1+ | 4.22 EUR |
| 10+ | 3.19 EUR |
| 100+ | 2.85 EUR |
| 500+ | 2.66 EUR |
| 1000+ | 1.4 EUR |
| 5000+ | 1.32 EUR |
| 10000+ | 1.31 EUR |
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Technische Details STGB50H65FB2 STMicroelectronics
Description: IGBT TRENCH FS 650V 86A TO-263, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 28ns/115ns, Switching Energy: 910µJ (on), 580µJ (off), Test Condition: 400V, 50A, 4.7Ohm, 15V, Gate Charge: 151 nC, Current - Collector (Ic) (Max): 86 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 272 W.
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STGB50H65FB2 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 86A TO-263 Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 28ns/115ns Switching Energy: 910µJ (on), 580µJ (off) Test Condition: 400V, 50A, 4.7Ohm, 15V Gate Charge: 151 nC Current - Collector (Ic) (Max): 86 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 272 W |
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