STGB5H60DF STMicroelectronics
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Technische Details STGB5H60DF STMicroelectronics
Description: TRENCH GATE FIELD-STOP IGBT, H S, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 134.5 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 30ns/140ns, Switching Energy: 56µJ (on), 78.5µJ (off), Test Condition: 400V, 5A, 47Ohm, 15V, Gate Charge: 43 nC, Part Status: Active, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 20 A, Power - Max: 88 W.
Weitere Produktangebote STGB5H60DF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STGB5H60DF | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 600V 10A 88W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STGB5H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 10A 88W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STGB5H60DF | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 5A; 88W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 5A Power dissipation: 88W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB5H60DF | Hersteller : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP IGBT, H S Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 134.5 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/140ns Switching Energy: 56µJ (on), 78.5µJ (off) Test Condition: 400V, 5A, 47Ohm, 15V Gate Charge: 43 nC Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 20 A Power - Max: 88 W |
Produkt ist nicht verfügbar |
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STGB5H60DF | Hersteller : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP IGBT, H S Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 134.5 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/140ns Switching Energy: 56µJ (on), 78.5µJ (off) Test Condition: 400V, 5A, 47Ohm, 15V Gate Charge: 43 nC Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 20 A Power - Max: 88 W |
Produkt ist nicht verfügbar |
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STGB5H60DF | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A high speed |
Produkt ist nicht verfügbar |
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| STGB5H60DF | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 5A; 88W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 5A Power dissipation: 88W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |