STGB6M65DF2 STMicroelectronics
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 1.14 EUR |
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Technische Details STGB6M65DF2 STMicroelectronics
Description: IGBT TRENCH 650V 12A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A, Supplier Device Package: D2PAK, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 15ns/90ns, Switching Energy: 36µJ (on), 200µJ (off), Test Condition: 400V, 6A, 22Ohm, 15V, Gate Charge: 21.2 nC, Part Status: Active, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 88 W.
Weitere Produktangebote STGB6M65DF2 nach Preis ab 1.44 EUR bis 3.67 EUR
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STGB6M65DF2 | Hersteller : STMicroelectronics |
 Description: IGBT TRENCH 650V 12A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Supplier Device Package: D2PAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 15ns/90ns Switching Energy: 36µJ (on), 200µJ (off) Test Condition: 400V, 6A, 22Ohm, 15V Gate Charge: 21.2 nC Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 88 W |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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STGB6M65DF2 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH 650V 12A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Supplier Device Package: D2PAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 15ns/90ns Switching Energy: 36µJ (on), 200µJ (off) Test Condition: 400V, 6A, 22Ohm, 15V Gate Charge: 21.2 nC Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 88 W |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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STGB6M65DF2 | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A low loss |
auf Bestellung 65 Stücke: Lieferzeit 14-28 Tag (e) |
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STGB6M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 12A 88000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STGB6M65DF2 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 6A; 88W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 6A Power dissipation: 88W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 24A Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGB6M65DF2 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 6A; 88W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 6A Power dissipation: 88W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 24A Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |