STGB7H60DF

STGB7H60DF STMicroelectronics


952dm00164492.pdf Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 600V 14A 88W 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 138 Stücke:

Lieferzeit 14-21 Tag (e)
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Technische Details STGB7H60DF STMicroelectronics

Description: IGBT 600V 14A 88W D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 136 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 30ns/160ns, Switching Energy: 99µJ (on), 100µJ (off), Test Condition: 400V, 7A, 47Ohm, 15V, Gate Charge: 46 nC, Part Status: Active, Current - Collector (Ic) (Max): 14 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 28 A, Power - Max: 88 W.

Weitere Produktangebote STGB7H60DF nach Preis ab 1.33 EUR bis 2.56 EUR

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STGB7H60DF STGB7H60DF Hersteller : STMicroelectronics 952dm00164492.pdf Trans IGBT Chip N-CH 600V 14A 88W 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
STGB7H60DF STGB7H60DF Hersteller : STMicroelectronics 952dm00164492.pdf Trans IGBT Chip N-CH 600V 14A 88W 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
STGB7H60DF Hersteller : STMicroelectronics stgb7h60df-1850657.pdf IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 7 A high speed
auf Bestellung 770 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
21+2.56 EUR
25+ 2.12 EUR
100+ 1.74 EUR
1000+ 1.33 EUR
Mindestbestellmenge: 21
STGB7H60DF STGB7H60DF Hersteller : STMicroelectronics 952dm00164492.pdf Trans IGBT Chip N-CH 600V 14A 88000mW 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STGB7H60DF Hersteller : STMicroelectronics en.DM00164492.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 28A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB7H60DF STGB7H60DF Hersteller : STMicroelectronics en.DM00164492.pdf Description: IGBT 600V 14A 88W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 99µJ (on), 100µJ (off)
Test Condition: 400V, 7A, 47Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 28 A
Power - Max: 88 W
Produkt ist nicht verfügbar
STGB7H60DF STGB7H60DF Hersteller : STMicroelectronics en.DM00164492.pdf Description: IGBT 600V 14A 88W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 99µJ (on), 100µJ (off)
Test Condition: 400V, 7A, 47Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 28 A
Power - Max: 88 W
Produkt ist nicht verfügbar
STGB7H60DF Hersteller : STMicroelectronics en.DM00164492.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 28A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar