STGB7NC60HDT4 STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT 600V 25A 80W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 18.5ns/72ns
Switching Energy: 95µJ (on), 115µJ (off)
Test Condition: 390V, 7A, 10Ohm, 15V
Gate Charge: 35 nC
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 80 W
auf Bestellung 412 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 5.43 EUR |
| 10+ | 4.51 EUR |
| 100+ | 3.59 EUR |
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Technische Details STGB7NC60HDT4 STMicroelectronics
Description: IGBT 600V 25A 80W D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 37 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A, Supplier Device Package: D2PAK, Td (on/off) @ 25°C: 18.5ns/72ns, Switching Energy: 95µJ (on), 115µJ (off), Test Condition: 390V, 7A, 10Ohm, 15V, Gate Charge: 35 nC, Part Status: Active, Current - Collector (Ic) (Max): 25 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 50 A, Power - Max: 80 W.
Weitere Produktangebote STGB7NC60HDT4 nach Preis ab 2.44 EUR bis 5.46 EUR
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STGB7NC60HDT4 | Hersteller : STMicroelectronics |
IGBT Transistors N-Ch 600 Volt 14 Amp |
auf Bestellung 966 Stücke: Lieferzeit 14-28 Tag (e) |
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STGB7NC60HDT4 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGB7NC60HDT4 - IGBT, 25 A, 2.5 V, 80 W, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85413000 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.5V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 80W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler Kollektor-Emitter-Spannung, max.: -V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 25A |
auf Bestellung 2025 Stücke: Lieferzeit 14-21 Tag (e) |
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STGB7NC60HDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 25A 80W 3-Pin(2+Tab) D2PAK T/R |
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STGB7NC60HDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 25A 80W 3-Pin(2+Tab) D2PAK T/R |
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STGB7NC60HDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2+Tab) D2PAK T/R |
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STGB7NC60HDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 25A 80W 3-Pin(2+Tab) D2PAK T/R |
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| STGB7NC60HDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2+Tab) D2PAK T/R |
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| STGB7NC60HDT4 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 14A Power dissipation: 80W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB7NC60HDT4 | Hersteller : STMicroelectronics |
Description: IGBT 600V 25A 80W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 18.5ns/72ns Switching Energy: 95µJ (on), 115µJ (off) Test Condition: 390V, 7A, 10Ohm, 15V Gate Charge: 35 nC Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 50 A Power - Max: 80 W |
Produkt ist nicht verfügbar |
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| STGB7NC60HDT4 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 14A Power dissipation: 80W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |