STGD10HF60KD STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 5A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 9.5ns/87ns
Switching Energy: 45µJ (on), 105µJ (off)
Test Condition: 400V, 5A, 10Ohm, 15V
Gate Charge: 23 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 62.5 W
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.63 EUR |
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Technische Details STGD10HF60KD STMicroelectronics
Description: IGBT 600V 10A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 50 ns, Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 5A, Supplier Device Package: DPAK, Td (on/off) @ 25°C: 9.5ns/87ns, Switching Energy: 45µJ (on), 105µJ (off), Test Condition: 400V, 5A, 10Ohm, 15V, Gate Charge: 23 nC, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 18 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 62.5 W, Qualification: AEC-Q101.
Weitere Produktangebote STGD10HF60KD nach Preis ab 2.15 EUR bis 5.41 EUR
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STGD10HF60KD | Hersteller : STMicroelectronics |
Description: IGBT 600V 10A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 5A Supplier Device Package: DPAK Td (on/off) @ 25°C: 9.5ns/87ns Switching Energy: 45µJ (on), 105µJ (off) Test Condition: 400V, 5A, 10Ohm, 15V Gate Charge: 23 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 18 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 62.5 W Qualification: AEC-Q101 |
auf Bestellung 3510 Stücke: Lieferzeit 10-14 Tag (e) |
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STGD10HF60KD | Hersteller : STMicroelectronics |
IGBT Transistors Automotive-grade 10 A, 600 V short-circuit rugged IGBT Ultrafast diode |
auf Bestellung 4163 Stücke: Lieferzeit 14-28 Tag (e) |
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STGD10HF60KD | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGD10HF60KD - IGBT, AEC-Q101, 18 A, 2.5 V, 62.5 W, 600 V, TO-252 (DPAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.5V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 62.5W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: PW Series Kollektor-Emitter-Spannung, max.: 600V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 18A SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 3025 Stücke: Lieferzeit 14-21 Tag (e) |
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STGD10HF60KD | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGD10HF60KD - IGBT, AEC-Q101, 18 A, 2.5 V, 62.5 W, 600 V, TO-252 (DPAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.5V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 62.5W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: PW Series Kollektor-Emitter-Spannung, max.: 600V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 18A SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 3025 Stücke: Lieferzeit 14-21 Tag (e) |
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STGD10HF60KD | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 18A 62500mW Automotive 3-Pin(2+Tab) DPAK T/R |
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STGD10HF60KD | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 18A 62.5W Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
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STGD10HF60KD | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 18A 62.5W Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
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| STGD10HF60KD | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 18A 62500mW Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| STGD10HF60KD | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 62.5W; DPAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 62.5W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Application: ignition systems Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGD10HF60KD | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 62.5W; DPAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 62.5W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Application: ignition systems |
Produkt ist nicht verfügbar |