STGD3NB60SDT4 STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT 600V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 3A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 125µs/-
Switching Energy: 1.15mJ (off)
Test Condition: 480V, 3A, 1kOhm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 48 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.64 EUR |
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Technische Details STGD3NB60SDT4 STMicroelectronics
Description: IGBT 600V 6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 1.7 µs, Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 3A, Supplier Device Package: DPAK, Td (on/off) @ 25°C: 125µs/-, Switching Energy: 1.15mJ (off), Test Condition: 480V, 3A, 1kOhm, 15V, Gate Charge: 18 nC, Part Status: Active, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 25 A, Power - Max: 48 W.
Weitere Produktangebote STGD3NB60SDT4 nach Preis ab 0.65 EUR bis 2.48 EUR
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STGD3NB60SDT4 | Hersteller : STMicroelectronics |
Description: IGBT 600V 6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.7 µs Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 3A Supplier Device Package: DPAK Td (on/off) @ 25°C: 125µs/- Switching Energy: 1.15mJ (off) Test Condition: 480V, 3A, 1kOhm, 15V Gate Charge: 18 nC Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 25 A Power - Max: 48 W |
auf Bestellung 3747 Stücke: Lieferzeit 10-14 Tag (e) |
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STGD3NB60SDT4 | Hersteller : STMicroelectronics |
IGBTs N-Ch 600 Volt 3 Amp |
auf Bestellung 7290 Stücke: Lieferzeit 10-14 Tag (e) |
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STGD3NB60SDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 6A 48W Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
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STGD3NB60SDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 6A 48W Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
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STGD3NB60SDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 6A 48000mW Automotive 3-Pin(2+Tab) DPAK T/R |
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| STGD3NB60SDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 6A 48000mW Automotive 3-Pin(2+Tab) DPAK T/R |
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| STGD3NB60SDT4 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 3A; 48W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 3A Pulsed collector current: 25A Type of transistor: IGBT Power dissipation: 48W Gate charge: 18nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGD3NB60SDT4 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 3A; 48W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 3A Pulsed collector current: 25A Type of transistor: IGBT Power dissipation: 48W Gate charge: 18nC |
Produkt ist nicht verfügbar |