STGD4H60DF STMicroelectronics
Hersteller: STMicroelectronics
IGBT Transistors Trench gate field-stop 600 V, 4 A high speed H series IGBT
IGBT Transistors Trench gate field-stop 600 V, 4 A high speed H series IGBT
auf Bestellung 250 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 22+ | 2.44 EUR |
| 26+ | 2 EUR |
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Technische Details STGD4H60DF STMicroelectronics
Description: Linear IC's, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 73 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 3A, Supplier Device Package: DPAK (TO-252) type C2, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 35ns/121ns, Switching Energy: 68µJ (on), 45µJ (off), Test Condition: 400V, 3A, 47Ohm, 15V, Gate Charge: 35 nC, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 16 A, Power - Max: 75 W.
Weitere Produktangebote STGD4H60DF nach Preis ab 1.39 EUR bis 2.39 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STGD4H60DF | Hersteller : STMicroelectronics |
Description: Linear IC's Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 73 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 3A Supplier Device Package: DPAK (TO-252) type C2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 35ns/121ns Switching Energy: 68µJ (on), 45µJ (off) Test Condition: 400V, 3A, 47Ohm, 15V Gate Charge: 35 nC Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 16 A Power - Max: 75 W |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
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| STGD4H60DF | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 4A; 75W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 4A Power dissipation: 75W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 16A Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGD4H60DF | Hersteller : STMicroelectronics |
Description: Linear IC's Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 73 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 3A Supplier Device Package: DPAK (TO-252) type C2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 35ns/121ns Switching Energy: 68µJ (on), 45µJ (off) Test Condition: 400V, 3A, 47Ohm, 15V Gate Charge: 35 nC Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 16 A Power - Max: 75 W |
Produkt ist nicht verfügbar |
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| STGD4H60DF | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 4A; 75W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 4A Power dissipation: 75W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 16A Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |