STGD4H60DF STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT TRENCH FS 600V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 3A
Supplier Device Package: DPAK (TO-252) type C2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 35ns/121ns
Switching Energy: 68µJ (on), 45µJ (off)
Test Condition: 400V, 3A, 47Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 16 A
Power - Max: 75 W
auf Bestellung 256 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 1.34 EUR |
| 19+ | 0.96 EUR |
| 25+ | 0.86 EUR |
| 100+ | 0.75 EUR |
| 250+ | 0.7 EUR |
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Technische Details STGD4H60DF STMicroelectronics
Description: IGBT TRENCH FS 600V 8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 73 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 3A, Supplier Device Package: DPAK (TO-252) type C2, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 35ns/121ns, Switching Energy: 68µJ (on), 45µJ (off), Test Condition: 400V, 3A, 47Ohm, 15V, Gate Charge: 35 nC, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 16 A, Power - Max: 75 W.
Weitere Produktangebote STGD4H60DF nach Preis ab 0.47 EUR bis 2.01 EUR
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STGD4H60DF | Hersteller : STMicroelectronics |
IGBTs Trench gate field-stop 600 V, 4 A high speed H series IGBT |
auf Bestellung 2520 Stücke: Lieferzeit 10-14 Tag (e) |
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STGD4H60DF | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGD4H60DF - IGBT, 8 A, 1.6 V, 75 W, 600 V, TO-252 (DPAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.6V usEccn: EAR99 euEccn: NLR Verlustleistung: 75W Bauform - Transistor: TO-252 (DPAK) Dauerkollektorstrom: 8A Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 600V productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 216 Stücke: Lieferzeit 14-21 Tag (e) |
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STGD4H60DF | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGD4H60DF - IGBT, 8 A, 1.6 V, 75 W, 600 V, TO-252 (DPAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.6V usEccn: EAR99 euEccn: NLR Verlustleistung: 75W Bauform - Transistor: TO-252 (DPAK) Dauerkollektorstrom: 8A Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 600V productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 216 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGD4H60DF | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 4A; 75W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 4A Power dissipation: 75W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 16A Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGD4H60DF | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 600V 8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 73 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 3A Supplier Device Package: DPAK (TO-252) type C2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 35ns/121ns Switching Energy: 68µJ (on), 45µJ (off) Test Condition: 400V, 3A, 47Ohm, 15V Gate Charge: 35 nC Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 16 A Power - Max: 75 W |
Produkt ist nicht verfügbar |
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| STGD4H60DF | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 4A; 75W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 4A Power dissipation: 75W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 16A Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |