STGD4H60DF STMICROELECTRONICS
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STGD4H60DF - IGBT, 8 A, 1.6 V, 75 W, 600 V, TO-252 (DPAK), 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.6V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 75W
Bauform - Transistor: TO-252 (DPAK)
Dauerkollektorstrom: 8A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 600V
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (21-Jan-2025)
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Technische Details STGD4H60DF STMICROELECTRONICS
Description: IGBT TRENCH FS 600V 8A DPAK, Power - Max: 75 W, Current - Collector Pulsed (Icm): 16 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 8 A, Gate Charge: 35 nC, Test Condition: 400V, 3A, 47Ohm, 15V, Switching Energy: 68µJ (on), 45µJ (off), Td (on/off) @ 25°C: 35ns/121ns, IGBT Type: Trench Field Stop, Supplier Device Package: DPAK (TO-252) type C2, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 3A, Reverse Recovery Time (trr): 73 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote STGD4H60DF nach Preis ab 0.55 EUR bis 2.4 EUR
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STGD4H60DF | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGD4H60DF - IGBT, 8 A, 1.6 V, 75 W, 600 V, TO-252 (DPAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.6V usEccn: EAR99 euEccn: NLR Verlustleistung: 75W Bauform - Transistor: TO-252 (DPAK) Dauerkollektorstrom: 8A Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 600V productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 216 Stücke: Lieferzeit 14-21 Tag (e) |
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STGD4H60DF | STMicroelectronics |
IGBTs Trench gate field-stop 600 V, 4 A high speed H series IGBT |
auf Bestellung 2485 Stücke: Lieferzeit 10-14 Tag (e) |
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STGD4H60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 8A DPAK IGBT Type: Trench Field Stop Supplier Device Package: DPAK (TO-252) type C2 Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 3A Reverse Recovery Time (trr): 73 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Power - Max: 75 W Current - Collector Pulsed (Icm): 16 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 8 A Gate Charge: 35 nC Test Condition: 400V, 3A, 47Ohm, 15V Switching Energy: 68µJ (on), 45µJ (off) Td (on/off) @ 25°C: 35ns/121ns |
auf Bestellung 246 Stücke: Lieferzeit 10-14 Tag (e) |
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| STGD4H60DF |
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Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STGD4H60DF - IGBT, 8 A, 1.6 V, 75 W, 600 V, TO-252 (DPAK), 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.6V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 75W
Bauform - Transistor: TO-252 (DPAK)
Dauerkollektorstrom: 8A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 600V
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (21-Jan-2025)
Description: STMICROELECTRONICS - STGD4H60DF - IGBT, 8 A, 1.6 V, 75 W, 600 V, TO-252 (DPAK), 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.6V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 75W
Bauform - Transistor: TO-252 (DPAK)
Dauerkollektorstrom: 8A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 600V
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 133+ | 1.88 EUR |
| 186+ | 1.25 EUR |
| STGD4H60DF |
|
Hersteller: STMicroelectronics
IGBTs Trench gate field-stop 600 V, 4 A high speed H series IGBT
IGBTs Trench gate field-stop 600 V, 4 A high speed H series IGBT
auf Bestellung 2485 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.37 EUR |
| 10+ | 1.48 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.74 EUR |
| 2500+ | 0.61 EUR |
| 5000+ | 0.55 EUR |
| STGD4H60DF |
|
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 8A DPAK
IGBT Type: Trench Field Stop
Supplier Device Package: DPAK (TO-252) type C2
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 3A
Reverse Recovery Time (trr): 73 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power - Max: 75 W
Current - Collector Pulsed (Icm): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 8 A
Gate Charge: 35 nC
Test Condition: 400V, 3A, 47Ohm, 15V
Switching Energy: 68µJ (on), 45µJ (off)
Td (on/off) @ 25°C: 35ns/121ns
Description: IGBT TRENCH FS 600V 8A DPAK
IGBT Type: Trench Field Stop
Supplier Device Package: DPAK (TO-252) type C2
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 3A
Reverse Recovery Time (trr): 73 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power - Max: 75 W
Current - Collector Pulsed (Icm): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 8 A
Gate Charge: 35 nC
Test Condition: 400V, 3A, 47Ohm, 15V
Switching Energy: 68µJ (on), 45µJ (off)
Td (on/off) @ 25°C: 35ns/121ns
auf Bestellung 246 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.4 EUR |
| 14+ | 1.51 EUR |
| 100+ | 0.99 EUR |