STGD5H60DF STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT TRENCH FS 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: DPAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 83 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.63 EUR |
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Technische Details STGD5H60DF STMicroelectronics
Description: IGBT TRENCH FS 600V 10A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 134.5 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A, Supplier Device Package: DPAK, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 30ns/140ns, Switching Energy: 56µJ (on), 78.5µJ (off), Test Condition: 400V, 5A, 47Ohm, 15V, Gate Charge: 43 nC, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 20 A, Power - Max: 83 W.
Weitere Produktangebote STGD5H60DF nach Preis ab 0.62 EUR bis 2.52 EUR
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STGD5H60DF | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 5A; 83W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 5A Power dissipation: 83W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2388 Stücke: Lieferzeit 7-14 Tag (e) |
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STGD5H60DF | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 5A; 83W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 5A Power dissipation: 83W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 2388 Stücke: Lieferzeit 14-21 Tag (e) |
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STGD5H60DF | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 600V 10A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 134.5 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A Supplier Device Package: DPAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/140ns Switching Energy: 56µJ (on), 78.5µJ (off) Test Condition: 400V, 5A, 47Ohm, 15V Gate Charge: 43 nC Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 20 A Power - Max: 83 W |
auf Bestellung 4266 Stücke: Lieferzeit 10-14 Tag (e) |
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STGD5H60DF | Hersteller : STMicroelectronics |
IGBTs Trench gate field-stop IGBT, H series 600 V, 5 A high speed |
auf Bestellung 2465 Stücke: Lieferzeit 10-14 Tag (e) |
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STGD5H60DF | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGD5H60DF - IGBT, 10 A, 1.5 V, 83 W, 600 V, TO-252 (DPAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.5V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 83W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: H Kollektor-Emitter-Spannung, max.: 600V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 10A SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 4204 Stücke: Lieferzeit 14-21 Tag (e) |
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STGD5H60DF | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGD5H60DF - IGBT, 10 A, 1.5 V, 83 W, 600 V, TO-252 (DPAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.5V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 83W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: H Kollektor-Emitter-Spannung, max.: 600V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 10A SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 4204 Stücke: Lieferzeit 14-21 Tag (e) |
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STGD5H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 10A 83000mW 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 17500 Stücke: Lieferzeit 14-21 Tag (e) |
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STGD5H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 10A 83W 3-Pin(2+Tab) DPAK T/R |
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| STGD5H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 10A 83000mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STGD5H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 10A 83W 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |