Technische Details STGD6M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 12A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A, Supplier Device Package: DPAK, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 15ns/90ns, Switching Energy: 36µJ (on), 200µJ (off), Test Condition: 400V, 6A, 22Ohm, 15V, Gate Charge: 21.2 nC, Part Status: Active, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 88 W.
Weitere Produktangebote STGD6M65DF2 nach Preis ab 0.52 EUR bis 3.17 EUR
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STGD6M65DF2 | STMicroelectronics |
 Trans IGBT Chip N-CH 650V 12A 88W 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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STGD6M65DF2 | STMicroelectronics |
Trans IGBT Chip N-CH 650V 12A 88W 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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STGD6M65DF2 | STMicroelectronics |
Trans IGBT Chip N-CH 650V 12A 88W 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 12500 Stücke: Lieferzeit 14-21 Tag (e) |
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STGD6M65DF2 | STMicroelectronics |
IGBTs Trench gate field-stop IGBT, M series 650 V, 6 A low loss |
auf Bestellung 1720 Stücke: Lieferzeit 10-14 Tag (e) |
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STGD6M65DF2 | STMicroelectronics |
Description: IGBT TRENCH FS 650V 12A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Supplier Device Package: DPAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 15ns/90ns Switching Energy: 36µJ (on), 200µJ (off) Test Condition: 400V, 6A, 22Ohm, 15V Gate Charge: 21.2 nC Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 88 W |
auf Bestellung 3954 Stücke: Lieferzeit 10-14 Tag (e) |
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| STGD6M65DF2 |
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Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 650V 12A 88W 3-Pin(2+Tab) DPAK T/R
Trans IGBT Chip N-CH 650V 12A 88W 3-Pin(2+Tab) DPAK T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.75 EUR |
| STGD6M65DF2 |
|
Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 650V 12A 88W 3-Pin(2+Tab) DPAK T/R
Trans IGBT Chip N-CH 650V 12A 88W 3-Pin(2+Tab) DPAK T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.76 EUR |
| STGD6M65DF2 |
|
Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 650V 12A 88W 3-Pin(2+Tab) DPAK T/R
Trans IGBT Chip N-CH 650V 12A 88W 3-Pin(2+Tab) DPAK T/R
auf Bestellung 12500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 176+ | 0.99 EUR |
| 198+ | 0.84 EUR |
| 224+ | 0.73 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.57 EUR |
| 2500+ | 0.52 EUR |
| STGD6M65DF2 |
|
Hersteller: STMicroelectronics
IGBTs Trench gate field-stop IGBT, M series 650 V, 6 A low loss
IGBTs Trench gate field-stop IGBT, M series 650 V, 6 A low loss
auf Bestellung 1720 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.92 EUR |
| 10+ | 1.86 EUR |
| 100+ | 1.24 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.88 EUR |
| 2500+ | 0.8 EUR |
| 5000+ | 0.73 EUR |
| STGD6M65DF2 |
|
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: DPAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/90ns
Switching Energy: 36µJ (on), 200µJ (off)
Test Condition: 400V, 6A, 22Ohm, 15V
Gate Charge: 21.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 88 W
Description: IGBT TRENCH FS 650V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: DPAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/90ns
Switching Energy: 36µJ (on), 200µJ (off)
Test Condition: 400V, 6A, 22Ohm, 15V
Gate Charge: 21.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 88 W
auf Bestellung 3954 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.17 EUR |
| 11+ | 2 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.95 EUR |