STGD6M65DF2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: TRENCH GATE FIELD-STOP IGBT, M S
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: DPAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/90ns
Switching Energy: 36µJ (on), 200µJ (off)
Test Condition: 400V, 6A, 22Ohm, 15V
Gate Charge: 21.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 88 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.88 EUR |
| 5000+ | 0.84 EUR |
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Technische Details STGD6M65DF2 STMicroelectronics
Description: TRENCH GATE FIELD-STOP IGBT, M S, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A, Supplier Device Package: DPAK, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 15ns/90ns, Switching Energy: 36µJ (on), 200µJ (off), Test Condition: 400V, 6A, 22Ohm, 15V, Gate Charge: 21.2 nC, Part Status: Active, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 88 W.
Weitere Produktangebote STGD6M65DF2 nach Preis ab 0.85 EUR bis 2.16 EUR
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STGD6M65DF2 | Hersteller : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP IGBT, M S Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Supplier Device Package: DPAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 15ns/90ns Switching Energy: 36µJ (on), 200µJ (off) Test Condition: 400V, 6A, 22Ohm, 15V Gate Charge: 21.2 nC Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 88 W |
auf Bestellung 7200 Stücke: Lieferzeit 10-14 Tag (e) |
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STGD6M65DF2 | Hersteller : STMicroelectronics |
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auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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STGD6M65DF2 | Hersteller : STMicroelectronics |
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STGD6M65DF2 | Hersteller : STMicroelectronics |
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| STGD6M65DF2 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 6A; 88W; DPAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 6A Power dissipation: 88W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 24A Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGD6M65DF2 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 6A; 88W; DPAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 6A Power dissipation: 88W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 24A Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |