STGF10H60DF STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 141+ | 1.27 EUR |
| 147+ | 1.19 EUR |
| 500+ | 1.05 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
141 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details STGF10H60DF STMicroelectronics
Description: IGBT TRENCH FS 600V 20A TO-220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 107 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A, Supplier Device Package: TO-220FP, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 19.5ns/103ns, Switching Energy: 83µJ (on), 140µJ (off), Test Condition: 400V, 10A, 10Ohm, 15V, Gate Charge: 57 nC, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 30 W.
Weitere Produktangebote STGF10H60DF nach Preis ab 0.98 EUR bis 4.33 EUR
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STGF10H60DF | STMicroelectronics |
 Trans IGBT Chip N-CH 600V 20A 30W 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
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STGF10H60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 20A TO-220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 107 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A Supplier Device Package: TO-220FP IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19.5ns/103ns Switching Energy: 83µJ (on), 140µJ (off) Test Condition: 400V, 10A, 10Ohm, 15V Gate Charge: 57 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 30 W |
auf Bestellung 1908 Stücke: Lieferzeit 10-14 Tag (e) |
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STGF10H60DF | STMicroelectronics |
IGBTs Trench gate H series 600V 10A HiSpd |
auf Bestellung 2631 Stücke: Lieferzeit 10-14 Tag (e) |
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STGF10H60DF | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 30W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 30W Case: TO220FP Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 40A Gate-emitter voltage: ±20V Gate charge: 57nC |
auf Bestellung 132 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STGF10H60DF |
|
Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 600V 20A 30W 3-Pin(3+Tab) TO-220FP Tube
Trans IGBT Chip N-CH 600V 20A 30W 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 111+ | 1.61 EUR |
| 140+ | 1.23 EUR |
| 147+ | 1.13 EUR |
| 500+ | 0.98 EUR |
| STGF10H60DF |
|
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 20A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.5ns/103ns
Switching Energy: 83µJ (on), 140µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 30 W
Description: IGBT TRENCH FS 600V 20A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.5ns/103ns
Switching Energy: 83µJ (on), 140µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 30 W
auf Bestellung 1908 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.21 EUR |
| 50+ | 2.03 EUR |
| 100+ | 1.82 EUR |
| 500+ | 1.45 EUR |
| 1000+ | 1.33 EUR |
| STGF10H60DF |
|
Hersteller: STMicroelectronics
IGBTs Trench gate H series 600V 10A HiSpd
IGBTs Trench gate H series 600V 10A HiSpd
auf Bestellung 2631 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.33 EUR |
| 10+ | 2.76 EUR |
| 100+ | 1.86 EUR |
| 500+ | 1.51 EUR |
| 1000+ | 1.36 EUR |
| 2000+ | 1.26 EUR |
| 4000+ | 1.2 EUR |
| STGF10H60DF |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 30W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 30W
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 40A
Gate-emitter voltage: ±20V
Gate charge: 57nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 30W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 30W
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 40A
Gate-emitter voltage: ±20V
Gate charge: 57nC
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)