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STGF10M65DF2

STGF10M65DF2 STMicroelectronics


en.DM00157910.pdf Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 96 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/91ns
Switching Energy: 120µJ (on), 270µJ (off)
Test Condition: 400V, 10A, 22Ohm, 15V
Gate Charge: 28 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 30 W
auf Bestellung 1613 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.02 EUR
50+ 1.63 EUR
100+ 1.29 EUR
500+ 1.1 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 9
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Technische Details STGF10M65DF2 STMicroelectronics

Description: IGBT TRENCH FS 650V 20A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 96 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A, Supplier Device Package: TO-220FP, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 19ns/91ns, Switching Energy: 120µJ (on), 270µJ (off), Test Condition: 400V, 10A, 22Ohm, 15V, Gate Charge: 28 nC, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 30 W.

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Power dissipation: 30W
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