STGF10M65DF2 STMicroelectronics
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 20A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 96 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/91ns
Switching Energy: 120µJ (on), 270µJ (off)
Test Condition: 400V, 10A, 22Ohm, 15V
Gate Charge: 28 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 30 W
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.56 EUR |
| 50+ | 1.7 EUR |
| 100+ | 1.52 EUR |
| 500+ | 1.21 EUR |
| 1000+ | 1.11 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
6 Stücke
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Technische Details STGF10M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 20A TO-220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 96 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A, Supplier Device Package: TO-220FP, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 19ns/91ns, Switching Energy: 120µJ (on), 270µJ (off), Test Condition: 400V, 10A, 22Ohm, 15V, Gate Charge: 28 nC, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 30 W.
Weitere Produktangebote STGF10M65DF2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
STGF10M65DF2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 10A; 30W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 10A Power dissipation: 30W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Gate charge: 28nC Kind of package: tube |
auf Bestellung 142 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STGF10M65DF2 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 30W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 30W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 28nC
Kind of package: tube
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)