STGF15H60DF STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT 600V 30A 30W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24.5ns/118ns
Switching Energy: 136µJ (on), 207µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 30 W
auf Bestellung 606 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 4.32 EUR |
| 50+ | 3.47 EUR |
| 100+ | 2.86 EUR |
| 500+ | 2.42 EUR |
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Technische Details STGF15H60DF STMicroelectronics
Description: IGBT 600V 30A 30W TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 103 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A, Supplier Device Package: TO-220FP, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 24.5ns/118ns, Switching Energy: 136µJ (on), 207µJ (off), Test Condition: 400V, 15A, 10Ohm, 15V, Gate Charge: 81 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 30 W.
Weitere Produktangebote STGF15H60DF nach Preis ab 1.96 EUR bis 4.34 EUR
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STGF15H60DF | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate H series 600V 15A HiSpd |
auf Bestellung 950 Stücke: Lieferzeit 14-28 Tag (e) |
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STGF15H60DF | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGF15H60DF - IGBT, 30 A, 1.6 V, 30 W, 600 V, TO-220FP, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.6V usEccn: EAR99 euEccn: NLR Verlustleistung: 30W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: H Kollektor-Emitter-Spannung, max.: 600V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 30A |
auf Bestellung 681 Stücke: Lieferzeit 14-21 Tag (e) |
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STGF15H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 30A 30000mW 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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STGF15H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 30A 30W 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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| STGF15H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 30A 30000mW 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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| STGF15H60DF | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 15A; 30W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 30W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 81nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGF15H60DF | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 15A; 30W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 30W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 81nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |