STGF19NC60HD STMicroelectronics
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 32W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 32W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 32W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 32W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
12+ | 5.96 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STGF19NC60HD STMicroelectronics
Description: IGBT 600V 16A 32W TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 31 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A, Supplier Device Package: TO-220FP, Td (on/off) @ 25°C: 25ns/97ns, Switching Energy: 85µJ (on), 189µJ (off), Test Condition: 390V, 12A, 10Ohm, 15V, Gate Charge: 53 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 32 W.
Weitere Produktangebote STGF19NC60HD nach Preis ab 1.94 EUR bis 5.96 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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STGF19NC60HD | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 32W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 32W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 53nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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STGF19NC60HD | Hersteller : STMicroelectronics | Trans IGBT Chip N-CH 600V 16A 32000mW 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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STGF19NC60HD | Hersteller : STMicroelectronics | Trans IGBT Chip N-CH 600V 16A 32000mW 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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STGF19NC60HD | Hersteller : STMicroelectronics | Trans IGBT Chip N-CH 600V 16A 32mW 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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STGF19NC60HD | Hersteller : STMicroelectronics |
Description: IGBT 600V 16A 32W TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A Supplier Device Package: TO-220FP Td (on/off) @ 25°C: 25ns/97ns Switching Energy: 85µJ (on), 189µJ (off) Test Condition: 390V, 12A, 10Ohm, 15V Gate Charge: 53 nC Part Status: Obsolete Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 32 W |
Produkt ist nicht verfügbar |
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STGF19NC60HD | Hersteller : STMicroelectronics | IGBT Transistors N-CHANNEL MFT |
Produkt ist nicht verfügbar |