STGF30H60DF

STGF30H60DF STMicroelectronics


stgb30h60df-955832.pdf Hersteller: STMicroelectronics
IGBT Transistors 600V 30A High Speed Trench Gate IGBT
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Technische Details STGF30H60DF STMicroelectronics

Description: IGBT 600V 60A 37W TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 110 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A, Supplier Device Package: TO-220FP, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 50ns/160ns, Switching Energy: 350µJ (on), 400µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 105 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 37 W.

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STGF30H60DF STGF30H60DF Hersteller : STMicroelectronics en.DM00040343.pdf Description: IGBT 600V 60A 37W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 37 W
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