STGF30M65DF2 STMicroelectronics
Hersteller: STMicroelectronicsCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 38W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 38W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 108 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 27+ | 2.67 EUR |
| 30+ | 2.4 EUR |
| 40+ | 1.83 EUR |
| 42+ | 1.73 EUR |
| 2000+ | 1.66 EUR |
| 6000+ | 1.64 EUR |
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Technische Details STGF30M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 60A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-220FP, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 31.6ns/115ns, Switching Energy: 300µJ (on), 960µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 80 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 38 W.
Weitere Produktangebote STGF30M65DF2 nach Preis ab 1.66 EUR bis 5.3 EUR
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STGF30M65DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 38W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 38W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 80nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 108 Stücke: Lieferzeit 14-21 Tag (e) |
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STGF30M65DF2 | Hersteller : STMicroelectronics |
IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss |
auf Bestellung 611 Stücke: Lieferzeit 10-14 Tag (e) |
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STGF30M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 38W 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 204 Stücke: Lieferzeit 14-21 Tag (e) |
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STGF30M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 38W 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 205 Stücke: Lieferzeit 14-21 Tag (e) |
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STGF30M65DF2 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 60A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-220FP IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31.6ns/115ns Switching Energy: 300µJ (on), 960µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 80 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 38 W |
auf Bestellung 734 Stücke: Lieferzeit 10-14 Tag (e) |
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STGF30M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 38000mW 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 205 Stücke: Lieferzeit 14-21 Tag (e) |
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STGF30M65DF2 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGF30M65DF2 - IGBT, 60 A, 1.55 V, 38 W, 650 V, TO-220FP, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.55V usEccn: EAR99 euEccn: NLR Verlustleistung: 38W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: 650V M Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 60A SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 672 Stücke: Lieferzeit 14-21 Tag (e) |