STGF4M65DF2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT TRENCH FS 650V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 133 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/86ns
Switching Energy: 40µJ (on), 136µJ (off)
Test Condition: 400V, 4A, 47Ohm, 15V
Gate Charge: 15.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 16 A
Power - Max: 23 W
auf Bestellung 208 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 2.57 EUR |
| 50+ | 2.06 EUR |
| 100+ | 1.63 EUR |
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Technische Details STGF4M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 8A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 133 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A, Supplier Device Package: TO-220FP, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 12ns/86ns, Switching Energy: 40µJ (on), 136µJ (off), Test Condition: 400V, 4A, 47Ohm, 15V, Gate Charge: 15.2 nC, Part Status: Active, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 16 A, Power - Max: 23 W.
Weitere Produktangebote STGF4M65DF2 nach Preis ab 1.03 EUR bis 2.59 EUR
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auf Bestellung 83 Stücke: Lieferzeit 14-28 Tag (e) |
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Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 4A; 23W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 4A Power dissipation: 23W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 16A Mounting: THT Gate charge: 15.2nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
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| STGF4M65DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 4A; 23W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 4A Power dissipation: 23W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 16A Mounting: THT Gate charge: 15.2nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |