STGFW20V60F STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT 600V 40A 52W TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-3PF
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 52 W
auf Bestellung 281 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 4.26 EUR |
| 100+ | 3.51 EUR |
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Technische Details STGFW20V60F STMicroelectronics
Description: IGBT 600V 40A 52W TO3PF, Packaging: Tube, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A, Supplier Device Package: TO-3PF, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 38ns/149ns, Switching Energy: 200µJ (on), 130µJ (off), Test Condition: 400V, 20A, 15V, Gate Charge: 116 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 52 W.
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Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 86.7W; TO3PF Mounting: THT Power dissipation: 86.7W Case: TO3PF Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 80A Type of transistor: IGBT Gate charge: 116nC |
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