STGFW30H65FB STMicroelectronics
Hersteller: STMicroelectronicsIGBT Transistors Trench gate field-stop 650 V, 30 A high speed HB series IGBT
auf Bestellung 599 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 6.92 EUR |
| 10+ | 6.21 EUR |
| 25+ | 5.88 EUR |
| 100+ | 5.02 EUR |
| 600+ | 4.42 EUR |
| 1200+ | 3.59 EUR |
| 2700+ | 3.25 EUR |
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Technische Details STGFW30H65FB STMicroelectronics
Description: IGBT 650V 60A 58W TO3PF, Packaging: Tube, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-3PF-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 37ns/146ns, Switching Energy: 151µJ (on), 293µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 149 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 58 W.
Weitere Produktangebote STGFW30H65FB
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STGFW30H65FB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 58000mW 3-Pin(3+Tab) TO-3PF Tube |
Produkt ist nicht verfügbar |
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| STGFW30H65FB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 58000mW 3-Pin(3+Tab) TO-3PF Tube |
Produkt ist nicht verfügbar |
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| STGFW30H65FB | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 92W; TO3PF Mounting: THT Power dissipation: 92W Case: TO3PF Kind of package: tube Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 120A Type of transistor: IGBT Gate charge: 149nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGFW30H65FB | Hersteller : STMicroelectronics |
Description: IGBT 650V 60A 58W TO3PF Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-3PF-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/146ns Switching Energy: 151µJ (on), 293µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 149 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 58 W |
Produkt ist nicht verfügbar |
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| STGFW30H65FB | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 92W; TO3PF Mounting: THT Power dissipation: 92W Case: TO3PF Kind of package: tube Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 120A Type of transistor: IGBT Gate charge: 149nC |
Produkt ist nicht verfügbar |