STGFW30V60F STMicroelectronics
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Technische Details STGFW30V60F STMicroelectronics
Description: IGBT 600V 60A 58W TO3PF, Packaging: Tube, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A, Supplier Device Package: TO-3PF, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 45ns/189ns, Switching Energy: 383µJ (on), 233µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 163 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 58 W.
Weitere Produktangebote STGFW30V60F
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STGFW30V60F | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 600V 60A 58000mW 3-Pin(3+Tab) TO-3PF Tube |
Produkt ist nicht verfügbar |
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| STGFW30V60F | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 58000mW 3-Pin(3+Tab) TO-3PF Tube |
Produkt ist nicht verfügbar |
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STGFW30V60F | Hersteller : STMicroelectronics |
Description: IGBT 600V 60A 58W TO3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Supplier Device Package: TO-3PF IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 45ns/189ns Switching Energy: 383µJ (on), 233µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 163 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 58 W |
Produkt ist nicht verfügbar |