STGFW40H65FB STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT HB 650V 40A ISOWATT218
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-3PF-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/142ns
Switching Energy: 498µJ (on), 363µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 62.5 W
auf Bestellung 588 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 5.53 EUR |
| 30+ | 5.46 EUR |
| 120+ | 4.68 EUR |
| 510+ | 4.16 EUR |
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Technische Details STGFW40H65FB STMicroelectronics
Description: IGBT HB 650V 40A ISOWATT218, Packaging: Tube, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: TO-3PF-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 40ns/142ns, Switching Energy: 498µJ (on), 363µJ (off), Test Condition: 400V, 40A, 5Ohm, 15V, Gate Charge: 210 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 62.5 W.
Weitere Produktangebote STGFW40H65FB nach Preis ab 3.93 EUR bis 8.11 EUR
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| STGFW40H65FB | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop 650 V, 40 A high speed HB series IGBT |
auf Bestellung 311 Stücke: Lieferzeit 14-28 Tag (e) |
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STGFW40H65FB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 80A 62500mW 3-Pin(3+Tab) TO-3PF Tube |
Produkt ist nicht verfügbar |
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| STGFW40H65FB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 80A 62.5mW 3-Pin(3+Tab) TO-3PF Tube |
Produkt ist nicht verfügbar |
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| STGFW40H65FB | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 98.6W; TO3PF Mounting: THT Power dissipation: 98.6W Case: TO3PF Kind of package: tube Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A Type of transistor: IGBT Gate charge: 0.21µC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGFW40H65FB | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 98.6W; TO3PF Mounting: THT Power dissipation: 98.6W Case: TO3PF Kind of package: tube Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A Type of transistor: IGBT Gate charge: 0.21µC |
Produkt ist nicht verfügbar |