STGFW40V60DF STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT TRENCH FS 600V 80A TO3PF-3
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3PF-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 62.5 W
auf Bestellung 590 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 7.7 EUR |
| 30+ | 6.1 EUR |
| 120+ | 5.23 EUR |
| 510+ | 4.65 EUR |
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Technische Details STGFW40V60DF STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO3PF-3, Packaging: Tube, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 41 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A, Supplier Device Package: TO-3PF-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 52ns/208ns, Switching Energy: 456µJ (on), 411µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 226 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 62.5 W.
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STGFW40V60DF | Hersteller : STMicroelectronics |
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| STGFW40V60DF | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 98.5W; TO3PF Mounting: THT Power dissipation: 98.5W Features of semiconductor devices: integrated anti-parallel diode Case: TO3PF Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A Type of transistor: IGBT Gate charge: 226nC |
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