STGH30H65DFB-2AG STMicroelectronics
Hersteller: STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 260W 3-Pin(2+Tab) H2PAK T/R Automotive AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 2.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STGH30H65DFB-2AG STMicroelectronics
Description: IGBT TRENCH FS 650V 60A H2PAK-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 28 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: H2Pak-2, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 24ns/170ns, Switching Energy: 555µJ (on), 300µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 155 nC, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 260 W, Qualification: AEC-Q101.
Weitere Produktangebote STGH30H65DFB-2AG nach Preis ab 1.70 EUR bis 6.97 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STGH30H65DFB-2AG | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 60A H2PAK-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 28 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: H2Pak-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24ns/170ns Switching Energy: 555µJ (on), 300µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 155 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 260 W Qualification: AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
STGH30H65DFB-2AG | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 260W 3-Pin(2+Tab) H2PAK T/R Automotive AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
STGH30H65DFB-2AG | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 260W 3-Pin(2+Tab) H2PAK T/R Automotive AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
STGH30H65DFB-2AG | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 260W 3-Pin(2+Tab) H2PAK T/R Automotive AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
STGH30H65DFB-2AG | Hersteller : STMicroelectronics |
IGBTs Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT |
auf Bestellung 1231 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
STGH30H65DFB-2AG | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 60A H2PAK-2 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 28 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: H2Pak-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24ns/170ns Switching Energy: 555µJ (on), 300µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 155 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 260 W Qualification: AEC-Q101 |
auf Bestellung 1916 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
STGH30H65DFB-2AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGH30H65DFB-2AG - IGBT, 60 A, 1.55 V, 260 W, 650 V, H2PAK, 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.55V usEccn: EAR99 euEccn: NLR Verlustleistung: 260W Bauform - Transistor: H2PAK Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 60A SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 447 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
|
STGH30H65DFB-2AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGH30H65DFB-2AG - IGBT, 60 A, 1.55 V, 260 W, 650 V, H2PAK, 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.55V usEccn: EAR99 euEccn: NLR Verlustleistung: 260W Bauform - Transistor: H2PAK Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 60A SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 447 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
| STGH30H65DFB-2AG | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 260mW Automotive 3-Pin(2+Tab) H2PAK T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
| STGH30H65DFB-2AG | Hersteller : STMicroelectronics |
STGH30H65DFB-2AG |
Produkt ist nicht verfügbar |
||||||||||||||||||
| STGH30H65DFB-2AG | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 30A; 260W; H2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 260W Case: H2PAK Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: SMD Gate charge: 155nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| STGH30H65DFB-2AG | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 30A; 260W; H2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 260W Case: H2PAK Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: SMD Gate charge: 155nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |