STGP10H60DF STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT 600V 20A 115W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.5ns/103ns
Switching Energy: 83µJ (on), 140µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 115 W
auf Bestellung 1930 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 3.59 EUR |
| 50+ | 2.89 EUR |
| 100+ | 2.38 EUR |
| 500+ | 2.01 EUR |
| 1000+ | 1.71 EUR |
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Technische Details STGP10H60DF STMicroelectronics
Description: IGBT 600V 20A 115W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 107 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 19.5ns/103ns, Switching Energy: 83µJ (on), 140µJ (off), Test Condition: 400V, 10A, 10Ohm, 15V, Gate Charge: 57 nC, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 115 W.
Weitere Produktangebote STGP10H60DF nach Preis ab 1.65 EUR bis 3.64 EUR
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STGP10H60DF | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate H series 600V 10A HiSpd |
auf Bestellung 957 Stücke: Lieferzeit 14-28 Tag (e) |
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STGP10H60DF | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGP10H60DF - IGBT, 20 A, 1.5 V, 115 W, 600 V, TO-220AB, 3 Pin(s) tariffCode: 85412900 productTraceability: No Kollektor-Emitter-Spannung, max.: 600V rohsCompliant: YES Verlustleistung: 115W Anzahl der Pins: 3Pin(s) euEccn: NLR Kontinuierlicher Kollektorstrom: 20A hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.5V Betriebstemperatur, max.: 175°C usEccn: EAR99 |
auf Bestellung 897 Stücke: Lieferzeit 14-21 Tag (e) |
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STGP10H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 20A 115W 3-Pin(3+Tab) TO-220AB Tube |
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STGP10H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 20A 115000mW 3-Pin(3+Tab) TO-220AB Tube |
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| STGP10H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 20A 115000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STGP10H60DF | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 115W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 115W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Gate charge: 57nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGP10H60DF | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 115W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 115W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Gate charge: 57nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |