STGP10NB60SD STMicroelectronics
auf Bestellung 1 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 6.76 EUR |
| 10+ | 5.33 EUR |
| 100+ | 4.32 EUR |
| 250+ | 4.24 EUR |
| 500+ | 3.67 EUR |
| 1000+ | 3.12 EUR |
| 2000+ | 2.96 EUR |
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Technische Details STGP10NB60SD STMicroelectronics
Description: IGBT 600V 29A 80W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 37 ns, Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A, Supplier Device Package: TO-220, Td (on/off) @ 25°C: 700ns/1.2µs, Switching Energy: 600µJ (on), 5mJ (off), Test Condition: 480V, 10A, 1kOhm, 15V, Gate Charge: 33 nC, Part Status: Active, Current - Collector (Ic) (Max): 29 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 80 W.
Weitere Produktangebote STGP10NB60SD
| Foto | Bezeichnung | Hersteller | Beschreibung |
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auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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STGP10NB60SD | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 29A 80000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STGP10NB60SD | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 29A 80W 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STGP10NB60SD | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 29A 80000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STGP10NB60SD | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 16A; 80W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 16A Power dissipation: 80W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 33nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGP10NB60SD | Hersteller : STMicroelectronics |
Description: IGBT 600V 29A 80W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 700ns/1.2µs Switching Energy: 600µJ (on), 5mJ (off) Test Condition: 480V, 10A, 1kOhm, 15V Gate Charge: 33 nC Part Status: Active Current - Collector (Ic) (Max): 29 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 80 W |
Produkt ist nicht verfügbar |
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| STGP10NB60SD | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 16A; 80W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 16A Power dissipation: 80W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 33nC Kind of package: tube |
Produkt ist nicht verfügbar |