STGP10NB60SD STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT 600V 29A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 700ns/1.2µs
Switching Energy: 600µJ (on), 5mJ (off)
Test Condition: 480V, 10A, 1kOhm, 15V
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 80 W
auf Bestellung 844 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.8 EUR |
| 50+ | 2.39 EUR |
| 100+ | 2.16 EUR |
| 500+ | 1.75 EUR |
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Technische Details STGP10NB60SD STMicroelectronics
Description: IGBT 600V 29A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 37 ns, Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A, Supplier Device Package: TO-220, Td (on/off) @ 25°C: 700ns/1.2µs, Switching Energy: 600µJ (on), 5mJ (off), Test Condition: 480V, 10A, 1kOhm, 15V, Gate Charge: 33 nC, Part Status: Active, Current - Collector (Ic) (Max): 29 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 80 W.
Weitere Produktangebote STGP10NB60SD nach Preis ab 1.67 EUR bis 5.1 EUR
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| STGP10NB60SD | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 16A; 80W; TO220AB Type of transistor: IGBT Power dissipation: 80W Case: TO220AB Mounting: THT Kind of package: tube Pulsed collector current: 80A Gate charge: 33nC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 16A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGP10NB60SD | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 16A; 80W; TO220AB Type of transistor: IGBT Power dissipation: 80W Case: TO220AB Mounting: THT Kind of package: tube Pulsed collector current: 80A Gate charge: 33nC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 16A |
Produkt ist nicht verfügbar |