STGP10NC60HD STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT 600V 20A 65W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 14.2ns/72ns
Switching Energy: 31.8µJ (on), 95µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 19.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 65 W
auf Bestellung 1044 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 3.98 EUR |
| 50+ | 3.2 EUR |
| 100+ | 2.63 EUR |
| 500+ | 2.22 EUR |
| 1000+ | 1.89 EUR |
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Technische Details STGP10NC60HD STMicroelectronics
Description: IGBT 600V 20A 65W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 22 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A, Supplier Device Package: TO-220, Td (on/off) @ 25°C: 14.2ns/72ns, Switching Energy: 31.8µJ (on), 95µJ (off), Test Condition: 390V, 5A, 10Ohm, 15V, Gate Charge: 19.2 nC, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 65 W.
Weitere Produktangebote STGP10NC60HD nach Preis ab 1.81 EUR bis 4 EUR
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Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 65W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 65W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: THT Gate charge: 19.2nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
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STGP10NC60HD | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 65W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 65W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: THT Gate charge: 19.2nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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