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STGP10NC60HD
Produktcode: 110310
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Weitere Produktangebote STGP10NC60HD nach Preis ab 1.33 EUR bis 4.84 EUR
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STGP10NC60HD | STMicroelectronics |
Description: IGBT 600V 20A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 22 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 14.2ns/72ns Switching Energy: 31.8µJ (on), 95µJ (off) Test Condition: 390V, 5A, 10Ohm, 15V Gate Charge: 19.2 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 65 W |
auf Bestellung 996 Stücke: Lieferzeit 10-14 Tag (e) |
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STGP10NC60HD | STMicroelectronics |
IGBTs PowerMESH TM IGBT |
auf Bestellung 11462 Stücke: Lieferzeit 10-14 Tag (e) |
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STGP10NC60HD | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 65W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 65W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: THT Gate charge: 19.2nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 230 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STGP10NC60HD |
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Hersteller: STMicroelectronics
Description: IGBT 600V 20A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 14.2ns/72ns
Switching Energy: 31.8µJ (on), 95µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 19.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 65 W
Description: IGBT 600V 20A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 14.2ns/72ns
Switching Energy: 31.8µJ (on), 95µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 19.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 65 W
auf Bestellung 996 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.71 EUR |
| 50+ | 2.31 EUR |
| 100+ | 2.07 EUR |
| 500+ | 1.67 EUR |
| STGP10NC60HD |
|
Hersteller: STMicroelectronics
IGBTs PowerMESH TM IGBT
IGBTs PowerMESH TM IGBT
auf Bestellung 11462 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.84 EUR |
| 10+ | 2.89 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.7 EUR |
| 1000+ | 1.57 EUR |
| 2000+ | 1.45 EUR |
| 5000+ | 1.33 EUR |
| STGP10NC60HD |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19.2nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19.2nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)