STGP15M65DF2 STMicroelectronics
Hersteller: STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT M series, 650 V, 15 A low loss
auf Bestellung 981 Stücke:
Lieferzeit 140-154 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.24 EUR |
| 10+ | 2.62 EUR |
| 100+ | 2.16 EUR |
| 250+ | 2.11 EUR |
| 500+ | 1.81 EUR |
| 1000+ | 1.54 EUR |
| 2000+ | 1.46 EUR |
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Technische Details STGP15M65DF2 STMicroelectronics
Description: TRENCH GATE FIELD-STOP IGBT M SE, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 142 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 24ns/93ns, Switching Energy: 90µJ (on), 450µJ (off), Test Condition: 400V, 15A, 12Ohm, 15V, Gate Charge: 45 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 136 W.
Weitere Produktangebote STGP15M65DF2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STGP15M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 30A 136000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STGP15M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 30A 136000mW 3-Pin(3+Tab) TO-220AB Tube |
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STGP15M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 30A 136W 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STGP15M65DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 15A; 136W; TO220AB Kind of package: tube Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 15A Pulsed collector current: 60A Type of transistor: IGBT Power dissipation: 136W Gate charge: 45nC Mounting: THT Case: TO220AB Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGP15M65DF2 | Hersteller : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP IGBT M SE Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 142 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24ns/93ns Switching Energy: 90µJ (on), 450µJ (off) Test Condition: 400V, 15A, 12Ohm, 15V Gate Charge: 45 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 136 W |
Produkt ist nicht verfügbar |
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| STGP15M65DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 15A; 136W; TO220AB Kind of package: tube Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 15A Pulsed collector current: 60A Type of transistor: IGBT Power dissipation: 136W Gate charge: 45nC Mounting: THT Case: TO220AB |
Produkt ist nicht verfügbar |