STGP20H60DF STMicroelectronics
Hersteller: STMicroelectronicsCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 185 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 34+ | 2.12 EUR |
| 38+ | 1.92 EUR |
| 41+ | 1.77 EUR |
| 50+ | 1.7 EUR |
| 150+ | 1.52 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.37 EUR |
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Technische Details STGP20H60DF STMicroelectronics
Description: IGBT TRENCH FS 600V 40A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 90 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 42.5ns/177ns, Switching Energy: 209µJ (on), 261µJ (off), Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 115 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 167 W.
Weitere Produktangebote STGP20H60DF nach Preis ab 1.08 EUR bis 3.68 EUR
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STGP20H60DF | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 167W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 167W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 115nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 185 Stücke: Lieferzeit 14-21 Tag (e) |
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STGP20H60DF | Hersteller : STMicroelectronics |
IGBTs 600V 20A High Speed Trench Gate IGBT |
auf Bestellung 1106 Stücke: Lieferzeit 10-14 Tag (e) |
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STGP20H60DF | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 600V 40A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 42.5ns/177ns Switching Energy: 209µJ (on), 261µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 115 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 167 W |
auf Bestellung 891 Stücke: Lieferzeit 10-14 Tag (e) |
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STGP20H60DF | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGP20H60DF - IGBT, 40 A, 1.6 V, 167 W, 600 V, TO-220, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 1.6V usEccn: EAR99 euEccn: NLR Verlustleistung: 167W Bauform - Transistor: TO-220 Dauerkollektorstrom: 40A Anzahl der Pins: 3Pin(s) Produktpalette: Trench Series Kollektor-Emitter-Spannung, max.: 600V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 901 Stücke: Lieferzeit 14-21 Tag (e) |
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STGP20H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STGP20H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 40A 100W 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STGP20H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |