STGP20H65DFB2 STMICROELECTRONICS
Hersteller: STMICROELECTRONICSDescription: STMICROELECTRONICS - STGP20H65DFB2 - IGBT, 40 A, 1.65 V, 147 W, 650 V, TO-220, 3 Pin(s)
tariffCode: 85412900
productTraceability: No
Kollektor-Emitter-Spannung, max.: 650V
rohsCompliant: YES
Verlustleistung: 147W
Anzahl der Pins: 3Pin(s)
euEccn: NLR
Kontinuierlicher Kollektorstrom: 40A
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.65V
Betriebstemperatur, max.: 175°C
usEccn: EAR99
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details STGP20H65DFB2 STMICROELECTRONICS
Description: DISCRETE, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 215 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 16ns/78.8ns, Switching Energy: 265µJ (on), 214µJ (off), Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 56 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 147 W.
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| STGP20H65DFB2 | Hersteller : STMicroelectronics |
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| STGP20H65DFB2 | Hersteller : STMicroelectronics |
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| STGP20H65DFB2 | Hersteller : STMicroelectronics |
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| STGP20H65DFB2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 147W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 147W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 56nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
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| STGP20H65DFB2 | Hersteller : STMicroelectronics |
Description: DISCRETE Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 215 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 16ns/78.8ns Switching Energy: 265µJ (on), 214µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 56 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 147 W |
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| STGP20H65DFB2 | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT |
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| STGP20H65DFB2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 147W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 147W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 56nC Kind of package: tube |
Produkt ist nicht verfügbar |