STGP20M65DF2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT TRENCH 650V 40A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 166 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/108ns
Switching Energy: 140µJ (on), 560µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 166 W
auf Bestellung 897 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 5.38 EUR |
| 50+ | 4.34 EUR |
| 100+ | 3.57 EUR |
| 500+ | 3.02 EUR |
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Technische Details STGP20M65DF2 STMicroelectronics
Description: IGBT TRENCH 650V 40A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 166 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 26ns/108ns, Switching Energy: 140µJ (on), 560µJ (off), Test Condition: 400V, 20A, 12Ohm, 15V, Gate Charge: 63 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 166 W.
Weitere Produktangebote STGP20M65DF2 nach Preis ab 2.47 EUR bis 5.46 EUR
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STGP20M65DF2 | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss |
auf Bestellung 1994 Stücke: Lieferzeit 14-28 Tag (e) |
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STGP20M65DF2 | Hersteller : STMicroelectronics |
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| STGP20M65DF2 | Hersteller : STMicroelectronics |
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STGP20M65DF2 | Hersteller : STMicroelectronics |
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| STGP20M65DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 166W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 166W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 63nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGP20M65DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 166W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 166W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 63nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |