STGP20V60DF STMicroelectronics
Hersteller: STMicroelectronicsCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 28+ | 2.6 EUR |
| 33+ | 2.2 EUR |
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Technische Details STGP20V60DF STMicroelectronics
Description: IGBT TRENCH FS 600V 40A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 40 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 38ns/149ns, Switching Energy: 200µJ (on), 130µJ (off), Test Condition: 400V, 20A, 15V, Gate Charge: 116 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 167 W.
Weitere Produktangebote STGP20V60DF nach Preis ab 1.21 EUR bis 4.03 EUR
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STGP20V60DF | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 167W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 167W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 116nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 44 Stücke: Lieferzeit 7-14 Tag (e) |
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STGP20V60DF | Hersteller : STMicroelectronics |
IGBTs 600V 20A High Speed Trench Gate IGBT |
auf Bestellung 182 Stücke: Lieferzeit 10-14 Tag (e) |
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STGP20V60DF | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 600V 40A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 38ns/149ns Switching Energy: 200µJ (on), 130µJ (off) Test Condition: 400V, 20A, 15V Gate Charge: 116 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 167 W |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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STGP20V60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 40A 167W 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STGP20V60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STGP20V60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |