STGP20V60DF STMicroelectronics
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.71 EUR |
| 50+ | 2.83 EUR |
| 100+ | 2.55 EUR |
| 500+ | 2.06 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
4 Stücke
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Technische Details STGP20V60DF STMicroelectronics
Description: IGBT TRENCH FS 600V 40A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 40 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 38ns/149ns, Switching Energy: 200µJ (on), 130µJ (off), Test Condition: 400V, 20A, 15V, Gate Charge: 116 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 167 W.
Weitere Produktangebote STGP20V60DF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
STGP20V60DF | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 167W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 167W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 116nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STGP20V60DF |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)