STGP30H60DF STMicroelectronics
Hersteller: STMicroelectronicsCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Power dissipation: 260W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 105nC
auf Bestellung 364 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 3.07 EUR |
| 28+ | 2.63 EUR |
| 39+ | 1.86 EUR |
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Technische Details STGP30H60DF STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 110 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 50ns/160ns, Switching Energy: 350µJ (on), 400µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 105 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 260 W.
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STGP30H60DF | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 600V 60A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 110 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 50ns/160ns Switching Energy: 350µJ (on), 400µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 105 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
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