STGP30H60DF STMicroelectronics
auf Bestellung 920 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 48+ | 3.03 EUR |
| 68+ | 2.05 EUR |
| 100+ | 1.86 EUR |
| 500+ | 1.74 EUR |
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Technische Details STGP30H60DF STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 110 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 50ns/160ns, Switching Energy: 350µJ (on), 400µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 105 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 260 W.
Weitere Produktangebote STGP30H60DF nach Preis ab 1.59 EUR bis 5.74 EUR
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STGP30H60DF | Hersteller : STMicroelectronics |
 IGBTs 600V 30A High Speed Trench Gate IGBT |
auf Bestellung 243 Stücke: Lieferzeit 10-14 Tag (e) |
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STGP30H60DF | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 600V 60A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 110 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 50ns/160ns Switching Energy: 350µJ (on), 400µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 105 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
auf Bestellung 971 Stücke: Lieferzeit 10-14 Tag (e) |
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| STGP30H60DF | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 260W; TO220AB Mounting: THT Case: TO220AB Kind of package: tube Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 120A Power dissipation: 260W Collector-emitter voltage: 600V Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Gate charge: 105nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 475 Stücke: Lieferzeit 7-14 Tag (e) |
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| STGP30H60DF | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 260W; TO220AB Mounting: THT Case: TO220AB Kind of package: tube Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 120A Power dissipation: 260W Collector-emitter voltage: 600V Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Gate charge: 105nC |
auf Bestellung 475 Stücke: Lieferzeit 14-21 Tag (e) |
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STGP30H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 150W 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STGP30H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 150000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STGP30H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 150000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |